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FZT957TA, Транзистор: PNP; биполярный

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Код товара
8031433277
Артикул
FZT957TA
Бренд
DIODES INC.
Tab
Tab
Case
SOT223
PPAP
No
Type
PNP
Цена по запросу
(от 176,14 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Trans GP BJT PNP 300V 1A 3000 МВт 4-контактный(3+вкладки) SOT-223 T/R

Технические параметры

TabTab
CaseSOT223
PPAPNo
TypePNP
Brand:Diodes Incorporated
EU RoHSCompliant with Exemption
Series:FZT957
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Frequency85MHz
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
Вес, г0.11
PCB changed3
Part StatusActive
Technology:Si
Current gain100…300
ManufacturerDIODES INCORPORATED
Package TypeSOT-223(SC-73)
Polarisationbipolar
Subcategory:Transistors
ConfigurationSingle Dual Collector
Manufacturer:Diodes Incorporated
Mounting TypeSurface Mount
Package/Case:SOT-223-4
Product Type:BJTs-Bipolar Transistors
Configuration:Single
Kind of packagereel, tape
Mounting Style:SMD/SMT
Transistor TypePNP
Product CategoryBipolar Power
Supplier PackageSOT-223
Collector current1A
Power Dissipation3Вт
Product Category:Bipolar Transistors-BJT
Type of transistorPNP
Структураpnp
Transistor Polarity:PNP
Standard Package NameSOT
DC Current Gain hFE Min90hFE
Minimum DC Current Gain100@10mA@10V|100@500mA@10V|90@1A@10V
Pd - Power Dissipation:3 W
DC Current Gain hFE Max:300 at-500 mA, -10 V
Transistor ConfigurationSingle
КвалификацияAEC-Q101
Collector-emitter voltage300V
Maximum Power Dissipation3 W
Gain Bandwidth Product fT:85 MHz
Emitter- Base Voltage VEBO:7 V
Maximum Operating Frequency85 MHz
Number of Elements per Chip1
Continuous Collector Current1А
Maximum DC Collector Current-1 A
Maximum Emitter Base Voltage6 V
Collector Emitter Voltage Max300В
Collector- Base Voltage VCBO:330 V
Continuous Collector Current:-1 A
Maximum DC Collector Current:1 A
Maximum Operating Temperature+150 °C
Maximum Collector Base Voltage300 V
Maximum Operating Temperature:+150 C
Maximum Power Dissipation (mW)3000
Minimum Operating Temperature:-55 C
DC Collector/Base Gain hFE Min:90 at-1 A, -10 V
DC Усиление Тока hFE90hFE
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)7
Maximum Collector Emitter Voltage-300 V
Maximum Collector Base Voltage (V)300
Maximum Transition Frequency (MHz)85(Typ)
Частота Перехода ft85МГц
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Количество Выводов3вывод(-ов)
Монтаж транзистораSurface Mount
Collector- Emitter Voltage VCEO Max:300 V
Collector-Emitter Saturation Voltage:170 mV
Maximum Collector-Emitter Voltage (V)300
Maximum Base Emitter Saturation Voltage (V)1.15@300mA@1A
Полярность ТранзистораPNP
Factory Pack Quantity: Factory Pack Quantity:1000
Maximum Collector-Emitter Saturation Voltage (V)0.1@10mA@100mA|0.165@100mA@500mA|0.24@300mA@1A
Стиль Корпуса ТранзистораSOT-223
Максимальная Рабочая Температура150°C
Уровень Чувствительности к Влажности (MSL)MSL 1-Безлимитный

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