FZT869TA, 50nA 25V 3W 100@20A,2V 7A 100MHz 350mV@6.5A,150mA NPN -55°C~+150°C@(Tj) SOT-223-3 BIpolar TransIstors - BJT
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017601970
- Артикул
- FZT869TA
- Бренд
- DIODES INC.
- ECCN
- EAR99
- HTSUS
- 8541.29.0075
- Brand:
- Diodes Incorporated
- Package
- Tape & Reel (TR)Cut Tape (CT)
Цена по запросу
(от 228,57 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярный (BJT) транзистор NPN 25V 7A 100 МГц 3 Вт для поверxностного монтажа SOT-223
Технические параметры
| ECCN | EAR99 |
| HTSUS | 8541.29.0075 |
| Brand: | Diodes Incorporated |
| Package | Tape & Reel (TR)Cut Tape (CT) |
| Series: | FZT869 |
| Pin Count | 3+Tab |
| Вес, г | 3 |
| Power - Max | 3W |
| RoHS Status | ROHS3 Compliant |
| Technology: | Si |
| Package Type | SOT-223 |
| REACH Status | REACH Affected |
| Subcategory: | Transistors |
| Корпус | SOT-223 |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-223-4 |
| Transistor Type | NPN |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Base Product Number | FZT869 -> |
| Transistor Polarity: | NPN |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Frequency - Transition | 100MHz |
| Pd - Power Dissipation | 3W |
| Minimum DC Current Gain | 300 |
| Pd - Power Dissipation: | 3 W |
| Supplier Device Package | SOT-223 |
| DC Current Gain hFE Max: | 300 |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 3 W |
| Gain Bandwidth Product fT: | 100 MHz |
| Emitter- Base Voltage VEBO: | 6 V |
| Maximum Operating Frequency | 100 MHz |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | 7A |
| Maximum Emitter Base Voltage | 6 V |
| Collector- Base Voltage VCBO: | 60 V |
| Maximum DC Collector Current: | 7 A |
| Maximum Operating Temperature | +150 °C |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 150mA, 6.5A |
| Current - Collector (Ic) (Max) | 7A |
| Maximum Collector Base Voltage | 60 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 40 at 20 A, 1 V |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Maximum Collector Emitter Voltage | 25 V |
| Collector-Emitter Breakdown Voltage | 25V |
| Collector- Emitter Voltage VCEO Max: | 25 V |
| Collector-Emitter Saturation Voltage: | 350 mV |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1A, 1V |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Максимально допустимый ток к ( Iк макс.А) | 7 |
| Граничная частота коэффициента передачи тока fгр.МГц | 100 |