FZT857TA, Bipolar Transistors - BJT NPN High Voltage
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004841736
- Артикул
- FZT857TA
- Бренд
- DIODES INC.
- Case
- SOT223
- Brand:
- Diodes Incorporated
- Series:
- FZT857
- Version
- NPN
Цена по запросу
(от 145,94 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
NPN-транзистор, FZT857TA, ДИОДЫ NPN-транзистор средней мощности в корпусе SOT223. Особенности Не содержит галогенов и сурьмы Соответствует требованиям RoHS Соответствует стандартам AEC-Q101 для обеспечения высокой надежности
Технические параметры
| Case | SOT223 |
| Brand: | Diodes Incorporated |
| Series: | FZT857 |
| Version | NPN |
| Assembly | SMD |
| Mounting | SMD |
| Enclosure | SOT-223 |
| Frequency | 80MHz |
| Pin Count | 3+Tab |
| Вес, г | 3 |
| Min DC gain | 100 mA |
| Technology: | Si |
| Current gain | 100…300 |
| Manufacturer | DIODES INCORPORATED |
| Package Type | SOT-223 |
| Polarisation | bipolar |
| Subcategory: | Transistors |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Type: | BJTs-Bipolar Transistors |
| Rated current | 3.5 A |
| Configuration: | Single |
| Kind of package | reel, tape |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-223-4 |
| Transistor Type | NPN |
| Collector current | 3.5A |
| Power dissipation | 1.6W |
| Product Category: | Bipolar Transistors-BJT |
| Saturation voltage | 345 mV |
| Type of transistor | NPN |
| Структура | npn |
| Max DC amplification | 300 mA |
| Transistor Polarity: | NPN |
| Minimum DC Current Gain | 100 |
| Pd - Power Dissipation: | 3 W |
| Transit frequency fTmin | 80 MHz |
| DC Current Gain hFE Max: | 100 |
| Transistor Configuration | Single |
| Collector-emitter voltage | 300V |
| Maximum Power Dissipation | 3 W |
| Gain Bandwidth Product fT: | 80 MHz |
| max. operating temperature | 150 °C |
| min. operating temperature | -55 °C |
| Emitter- Base Voltage VEBO: | 7 V |
| Maximum Operating Frequency | 80 MHz |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | 3.5 A |
| Maximum Emitter Base Voltage | 6 V |
| Collector- Base Voltage VCBO: | 350 V |
| Continuous Collector Current: | 3.5 A |
| Maximum DC Collector Current: | 3.5 A |
| Maximum Operating Temperature | +150 C |
| Maximum Collector Base Voltage | 350 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 15 at 2 A, 10 V |
| Maximum Collector Emitter Voltage | 300 V |
| Collector- Emitter Voltage VCEO Max: | 300 V |
| Collector-Emitter Saturation Voltage: | 345 mV |
| max.voltage between collector and base Vcbo | 350 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| max.voltage between collector and emitter Vceo | 300 V |