FZT849TA, Bipolar Transistors - BJT NPN High Ct Low Sat
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- Код товара
- 8004841733
- Артикул
- FZT849TA
- Бренд
- DIODES INC.
- Brand
- Diodes Incorporated
- Brand:
- Diodes Incorporated
- Series
- FZT849
- Series:
- FZT849
Цена по запросу
(от 193 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: NPN, биполярный, 30В, 7А, 1,6Вт, SOT223 Характеристики Категория Транзистор Тип биполярный Вид NPN
Технические параметры
| Brand | Diodes Incorporated |
| Brand: | Diodes Incorporated |
| Series | FZT849 |
| Series: | FZT849 |
| Packaging | Cut Tape or Reel |
| Pin Count | 3+Tab |
| Вес, г | 0.16 |
| Subcategory | Transistors |
| Technology: | Si |
| Manufacturer | Diodes Incorporated |
| Package Type | SOT-223 |
| Product Type | BJTs-Bipolar Transistors |
| Subcategory: | Transistors |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-223-4 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-223-4 |
| Transistor Type | NPN |
| Product Category | Bipolar Transistors-BJT |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity | NPN |
| Transistor Polarity: | NPN |
| Factory Pack Quantity | 1000 |
| Pd - Power Dissipation | 3 W |
| DC Current Gain HFE Max | 100 |
| Minimum DC Current Gain | 100 |
| Pd - Power Dissipation: | 3 W |
| DC Current Gain hFE Max: | 100 |
| Transistor Configuration | Single |
| Gain Bandwidth Product FT | 100 MHz |
| Maximum Power Dissipation | 3 W |
| Emitter- Base Voltage VEBO | 6 V |
| Gain Bandwidth Product fT: | 100 MHz |
| Emitter- Base Voltage VEBO: | 7 V |
| Maximum Operating Frequency | 100 MHz |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO | 80 V |
| Continuous Collector Current | 7 A |
| Maximum DC Collector Current | 20 A |
| Maximum Emitter Base Voltage | 6 V |
| Collector- Base Voltage VCBO: | 80 V |
| Continuous Collector Current: | 7 A |
| Maximum DC Collector Current: | 7 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| DC Collector/Base Gain Hfe Min | 30 at 20 A, 2 V |
| Maximum Collector Base Voltage | 80 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 30 at 20 A, 2 V |
| Maximum Collector Emitter Voltage | 30 V |
| Collector- Emitter Voltage VCEO Max | 30 V |
| Collector- Emitter Voltage VCEO Max: | 30 V |
| Collector-Emitter Saturation Voltage | 350 mV |
| Collector-Emitter Saturation Voltage: | 350 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |