FZT796ATA, 100nA 200V 2W 300@10mA,10V 500mA 100MHz 300mV@200mA,20mA PNP -55°C~+150°C@(Tj) SOT-223-3 BIpolar TransIstors - BJT ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017630722
- Артикул
- FZT796ATA
- Бренд
- DIODES INC.
- Tab
- Tab
- ECCN
- EAR99
- PPAP
- No
- Type
- PNP
Цена по запросу
(от 182,89 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярный (BJT) транзистор PNP 200 В 500 мА 100 МГц 2 Вт для поверxностного монтажа SOT-223
Технические параметры
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Type | PNP |
| HTSUS | 8541.29.0075 |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant with Exemption |
| Package | Tape & Reel (TR)Cut Tape (CT) |
| Series: | FZT796 |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.18 |
| PCB changed | 3 |
| Part Status | Active |
| Power - Max | 2W |
| RoHS Status | ROHS3 Compliant |
| Technology: | Si |
| REACH Status | REACH Affected |
| Subcategory: | Transistors |
| Корпус | SOT-223 |
| Configuration | Single Dual Collector |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-223-4 |
| Transistor Type | PNP |
| Product Category | Bipolar Power |
| Supplier Package | SOT-223 |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Base Product Number | FZT796 -> |
| Transistor Polarity: | PNP |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Standard Package Name | SOT |
| Frequency - Transition | 100MHz |
| Pd - Power Dissipation: | 2 W |
| Supplier Device Package | SOT-223 |
| Gain Bandwidth Product fT: | 100 MHz |
| Emitter- Base Voltage VEBO: | 7 V |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO: | 200 V |
| Continuous Collector Current: | -500 mA |
| Maximum DC Collector Current: | 500 mA |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 20mA, 200mA |
| Current - Collector (Ic) (Max) | 500mA |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 3000 |
| Minimum Operating Temperature: | -55 C |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Maximum DC Collector Current (A) | 0.5 |
| Maximum Emitter Base Voltage (V) | 7 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Maximum Collector Base Voltage (V) | 200 |
| Maximum Transition Frequency (MHz) | 100(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector- Emitter Voltage VCEO Max: | 200 V |
| Collector-Emitter Saturation Voltage: | 300 mV |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 10mA, 10V |
| Maximum Collector-Emitter Voltage (V) | 200 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Maximum Base Emitter Saturation Voltage (V) | 0.95@20mA@200mA |
| Voltage - Collector Emitter Breakdown (Max) | 200V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.2@2mA@50mA|0.3@5mA@100mA|0.3@20mA@200mA |
| Граничная частота коэффициента передачи тока fгр.МГц | 100 |