FZT790ATA, Trans GP BJT PNP 40V 3A 3000mW 4-Pin(3+Tab) SOT-223 T/R
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- Код товара
- 8001140174
- Артикул
- FZT790ATA
- Бренд
- DIODES INC.
- HTS
- 8541.29.00.95
- Tab
- Tab
- Type
- PNP
- Brand:
- Diodes Incorporated
Цена по запросу
(от 76 ₽)
Минимальный заказ: 1000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
40 В 2 Вт 300 при 10 мА, 2 В 3 А биполярные транзисторы PNP SOT-223 - BJT ROHS
Технические параметры
| HTS | 8541.29.00.95 |
| Tab | Tab |
| Type | PNP |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant with Exemption |
| Series: | FZT790 |
| Material | Si |
| Military | No |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Subcategory: | Transistors |
| Корпус | SOT-223 |
| Configuration | Single Dual Collector |
| Manufacturer: | Diodes Incorporated |
| Package Width | 3.7(Max) |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Package Height | 1.65(Max) |
| Package Length | 6.7(Max) |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-223-4 |
| Transistor Type | PNP |
| Product Category | Bipolar Power |
| Supplier Package | SOT-223 |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| AEC Qualified Number | AEC-Q101 |
| Transistor Polarity: | PNP |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Standard Package Name | SOT-223 |
| Collector Current (Ic) | 3A |
| Power Dissipation (Pd) | 2W |
| Minimum DC Current Gain | 250@500mA@2V|150@2A@2V|300@10mA@2V|200@1A@2V |
| Pd - Power Dissipation: | 2 W |
| DC Current Gain hFE Max: | 300 |
| Transition Frequency (fT) | 100MHz |
| Gain Bandwidth Product fT: | 100 MHz |
| Emitter- Base Voltage VEBO: | 7 V |
| Number of Elements per Chip | 1 |
| DC Current Gain (hFE@Ic,Vce) | 300@10mA, 2V |
| Collector- Base Voltage VCBO: | 50 V |
| Continuous Collector Current: | -3 A |
| Maximum DC Collector Current: | 3 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 2000 |
| Minimum Operating Temperature: | -55 C |
| Collector Cut-Off Current (Icbo) | 100nA |
| Maximum DC Collector Current (A) | 3 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 50 |
| Maximum Transition Frequency (MHz) | 100(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector- Emitter Voltage VCEO Max: | 40 V |
| Collector-Emitter Saturation Voltage: | 400 mV |
| Maximum Collector-Emitter Voltage (V) | 40 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Collector-Emitter Breakdown Voltage (Vceo) | 40V |
| Maximum Base Emitter Saturation Voltage (V) | 1@10mA@1A |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.25@5mA@500mA|0.75@50mA@2A|0.45@10mA@1A |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 400mV@2A, 50mA |
| Максимально допустимый ток к ( Iк макс.А) | 3 |