FZT789ATA, Bipolar Transistors - BJT PNP High gain
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004674867
- Артикул
- FZT789ATA
- Бренд
- DIODES INC.
- HTS
- 8541.29.00.95
- Tab
- Tab
- ECCN
- EAR99
- Type
- PNP
Цена по запросу
(от 132,82 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: PNP, биполярный, 25В, 3А, 1,2Вт, SOT223 Характеристики Категория Транзистор Тип биполярный Вид PNP
Технические параметры
| HTS | 8541.29.00.95 |
| Tab | Tab |
| ECCN | EAR99 |
| Type | PNP |
| HTSUS | 8541.29.0075 |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant with Exemption |
| Package | Tape & Reel (TR)Cut Tape (CT) |
| Series: | FZT789 |
| Material | Si |
| Military | No |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Power - Max | 2W |
| RoHS Status | ROHS3 Compliant |
| Technology: | Si |
| Package Type | SOT-223(SC-73) |
| REACH Status | REACH Affected |
| Subcategory: | Transistors |
| Configuration | Single Dual Collector |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Package Width | 3.5 |
| Product Type: | BJTs-Bipolar Transistors |
| REACH - SVHC: | Details |
| Configuration: | Single |
| Package / Case | TO-261-4, TO-261AA |
| Package Height | 1.6 |
| Package Length | 6.5 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-223-4 |
| Transistor Type | PNP |
| Product Category | Bipolar Power |
| Supplier Package | SOT-223 |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Base Product Number | FZT789 -> |
| Transistor Polarity: | PNP |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Standard Package Name | SOT |
| Frequency - Transition | 100MHz |
| Minimum DC Current Gain | 100@6A@2V|300@10mA@2V|250@1A@2V|200@2A@2V |
| Pd - Power Dissipation: | 2 W |
| Supplier Device Package | SOT-223 |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 2 W |
| Gain Bandwidth Product fT: | 100 MHz |
| Supplier Temperature Grade | Automotive |
| Emitter- Base Voltage VEBO: | 7 V |
| Maximum Operating Frequency | 100 MHz |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | -3 A |
| Maximum Emitter Base Voltage | 5 V |
| Collector- Base Voltage VCBO: | 30 V |
| Continuous Collector Current: | -3 A |
| Maximum DC Collector Current: | 3 A |
| Maximum Operating Temperature | +150 °C |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 3A |
| Current - Collector (Ic) (Max) | 3A |
| Maximum Collector Base Voltage | 25 V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 3000 |
| Minimum Operating Temperature: | -55 C |
| Current - Collector Cutoff (Max) | 100nA |
| Maximum DC Collector Current (A) | 3 |
| Maximum Emitter Base Voltage (V) | 7 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Maximum Collector Emitter Voltage | -25 V |
| Maximum Collector Base Voltage (V) | 30 |
| Maximum Transition Frequency (MHz) | 100(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector- Emitter Voltage VCEO Max: | 25 V |
| Collector-Emitter Saturation Voltage: | 300 mV |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 10mA, 2V |
| Maximum Collector-Emitter Voltage (V) | 25 |
| Maximum Base Emitter Saturation Voltage (V) | 1@10mA@1A |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.45@20mA@2A|0.25@10mA@1A|0.5@100mA@3A |