Моя заявка (0)

FZT560TA, Trans GP BJT PNP 500V 0.15A 3000mW 4-Pin(3+Tab) SOT-223 T/R

FZT560TA, Trans GP BJT PNP 500V 0.15A 3000mW 4-Pin(3+Tab) SOT-223 T/R

Изображения служат только для ознакомления, см. техническую документацию

Код товара
8000997558
Артикул
FZT560TA
Бренд
DIODES INC.
HTS
8541.29.00.95
Tab
Tab
Type
PNP
Brand:
Diodes Incorporated
Цена по запросу
(от 72 ₽)
Минимальный заказ: 430 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Описание Транзистор: PNP, биполярный, 500В, 0,15А, 2Вт, SOT223 Характеристики Категория Транзистор Тип биполярный Вид PNP

Технические параметры

HTS8541.29.00.95
TabTab
TypePNP
Brand:Diodes Incorporated
EU RoHSCompliant with Exemption
Series:FZT560
MaterialSi
MilitaryNo
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
Вес, г1
PCB changed3
Part StatusActive
Technology:Si
Package TypeSOT-223(SC-73)
Subcategory:Transistors
КорпусSOT-223
ConfigurationSingle Dual Collector
Manufacturer:Diodes Incorporated
Mounting TypeSurface Mount
Package Width3.5
Product Type:BJTs-Bipolar Transistors
Configuration:Single
Package Height1.6
Package Length6.5
Mounting Style:SMD/SMT
Package / Case:SOT-223-4
Transistor TypePNP
Product CategoryBipolar Power
Supplier PackageSOT-223
Product Category:Bipolar Transistors-BJT
Структураpnp
Transistor Polarity:PNP
Standard Package NameSOT
Minimum DC Current Gain80@50mA@10V|100@1mA@10V
Pd - Power Dissipation:2 W
Transistor ConfigurationSingle
Maximum Power Dissipation2 W
Gain Bandwidth Product fT:60 MHz
Emitter- Base Voltage VEBO:7 V
Maximum Operating Frequency60 MHz
Number of Elements per Chip1
Maximum DC Collector Current-150 mA
Maximum Emitter Base Voltage5 V
Collector- Base Voltage VCBO:500 V
Continuous Collector Current:-150 mA
Maximum DC Collector Current:150 mA
Maximum Operating Temperature+150 °C
Maximum Collector Base Voltage500 V
Maximum Operating Temperature:+150 C
Maximum Power Dissipation (mW)2000
Minimum Operating Temperature:-55 C
Maximum DC Collector Current (A)0.15
Maximum Emitter Base Voltage (V)7
Maximum Collector Emitter Voltage-500 V
Maximum Collector Base Voltage (V)500
Maximum Transition Frequency (MHz)60(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Collector- Emitter Voltage VCEO Max:500 V
Operating Junction Temperature (°C)-55 to 150
Collector-Emitter Saturation Voltage:500 mV
Maximum Collector-Emitter Voltage (V)500
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)0.9@10mA@50mA
Factory Pack Quantity: Factory Pack Quantity:1000
Maximum Collector-Emitter Saturation Voltage (V)0.5@10mA@50mA|0.2@2mA@20mA

Техническая документация