FZT1049ATA, Транзистор: NPN, биполярный, 25В, 5А, 1,2Вт, SOT223
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- Код товара
- 8017535972
- Артикул
- FZT1049ATA
- Бренд
- DIODES INC.
- Tab
- Tab
- PPAP
- No
- Type
- NPN
- Brand:
- Diodes Incorporated
Цена по запросу
(от 205 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: NPN, биполярный, 25В, 5А, 1,2Вт, SOT223 Характеристики Категория Транзистор Тип биполярный Вид NPN
Технические параметры
| Tab | Tab |
| PPAP | No |
| Type | NPN |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant with Exemption |
| Series: | FZT104 |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3+Tab |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.15 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Package Type | SOT-223(SC-73) |
| Subcategory: | Transistors |
| Корпус | SOT-223 |
| Configuration | Single Dual Collector |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-223-4 |
| Transistor Type | NPN |
| Product Category | Bipolar Power |
| Supplier Package | SOT-223 |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity: | NPN |
| Standard Package Name | SOT |
| Pd - Power Dissipation | 2.5W |
| Minimum DC Current Gain | 300 |
| Pd - Power Dissipation: | 3 W |
| DC Current Gain hFE Max: | 280 |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 2.5 W |
| Gain Bandwidth Product fT: | 180 MHz |
| Emitter- Base Voltage VEBO: | 7 V |
| Maximum Operating Frequency | 180 MHz |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | 5A |
| Maximum Emitter Base Voltage | 5 V |
| Collector- Base Voltage VCBO: | 80 V |
| Continuous Collector Current: | 5 A |
| Maximum DC Collector Current: | 5 A |
| Maximum Operating Temperature | +150 °C |
| Maximum Collector Base Voltage | 80 V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 3000 |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 40 at 20 A, 2 V |
| Maximum DC Collector Current (A) | 5 |
| Maximum Emitter Base Voltage (V) | 7 |
| Maximum Collector Emitter Voltage | 25 V |
| Maximum Collector Base Voltage (V) | 80 |
| Maximum Transition Frequency (MHz) | 180(Typ) |
| Collector-Emitter Breakdown Voltage | 25V |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector- Emitter Voltage VCEO Max: | 25 V |
| Collector-Emitter Saturation Voltage: | 330 mV |
| Maximum Collector-Emitter Voltage (V) | 25 |
| Maximum Collector Cut-Off Current (nA) | 10 |
| Maximum Base Emitter Saturation Voltage (V) | 1.05@50mA@5A |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Максимальная рассеиваемая мощность ,Вт | 2.5 |
| Максимально допустимый ток к ( Iк макс.А) | 5 |
| Статический коэффициент передачи тока h21э мин | 300 |
| Граничная частота коэффициента передачи тока fгр.МГц | 180 |
| Макс. напр. к-э при заданном токе к и разомкнутой цепи б.(Uкэо макс),В | 25 |
| Макс. напр. к-б при заданном обратном токе к и разомкнутой цепи э.(Uкбо макс),В | 80 |