FS33MR12W1M1HB70BPSA1, Silicon Carbide MOSFET, SixPack, N Channel, 25 A, 1.2 kV, 0.0323 ohm, Module
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- Код товара
- 8046443055
- Артикул
- FS33MR12W1M1HB70BPSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Packaging:
- Tray
- Вес, г
- 100
- Technology:
- SiC
Цена по запросу
(от 16 560 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Infineon Technologies |
| Packaging: | Tray |
| Вес, г | 100 |
| Technology: | SiC |
| Subcategory: | Discrete and Power Modules |
| Manufacturer: | Infineon |
| Product Type: | MOSFET Modules |
| Configuration: | 6-Pack |
| Mounting Style: | Screw Mount |
| Package / Case: | Easy1B |
| Part # Aliases: | FS33MR12W1M1HB70BPSA1 SP005634675 |
| Product Category: | MOSFET Modules |
| Vf - Forward Voltage: | 5.35 V |
| Factory Pack Quantity: | 24 |
| Vgs - Gate-Source Voltage: | -10 V, +23 V |
| Id - Continuous Drain Current: | 25 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -40 C |
| Rds On - Drain-Source Resistance: | 32.3 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 1.2 kV |
| Vgs th - Gate-Source Threshold Voltage: | 4.3 V |