FS150R12KT4BOSA1, Infineon IGBT-Modul / 150 A ±20V max., 1200 V 750 W, 35-Pin EconoPACK 3 N-Kanal
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- Код товара
- 8064094928
- Артикул
- FS150R12KT4BOSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- PPAP
- No
- EU RoHS
- Compliant with Exemption
- Mounting
- Screw
- ECCN (US)
- EAR99
Цена по запросу
(от 20 480 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзисторный IGBT-модуль N-CH 1200V 150A 750000 МВт, 35-контактный лоток ECONO3-4
Технические параметры
| PPAP | No |
| EU RoHS | Compliant with Exemption |
| Mounting | Screw |
| ECCN (US) | EAR99 |
| Packaging | Tray |
| Pin Count | 35 |
| Automotive | No |
| Вес, г | 7 |
| PCB changed | 35 |
| Part Status | Active |
| Channel Type | N |
| Package Type | EconoPACK 3 |
| Configuration | Hex |
| Mounting Type | Surface Mount |
| Supplier Package | ECONO3-4 |
| Transistor Configuration | 3 Phase |
| Maximum Power Dissipation | 750 W |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -40 °C |
| Maximum Power Dissipation (mW) | 750000 |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Continuous Collector Current | 150 A |
| Maximum Collector-Emitter Voltage (V) | 1200 |
| Maximum Continuous Collector Current (A) | 150 |
| Maximum Gate Emitter Leakage Current (uA) | 0.1 |
| Typical Collector Emitter Saturation Voltage (V) | 1.75 |