FQU13N06LTU-WS, Trans MOSFET N-CH 60V 11A 3-Pin(3+Tab) IPAK Tube
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8002309569
- Артикул
- FQU13N06LTU-WS
- Бренд
- ON Semiconductor***
- Tab
- Tab
- PPAP
- No
- SVHC
- Yes
- Mounting
- Through Hole
Цена по запросу
(от 208 ₽)
Минимальный заказ: 366 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзисторный MOSFET N-CH 60V 11A 3-контактный (3 + язычка) IPAK-трубка
Технические параметры
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| Mounting | Through Hole |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 2.5(Max)mm |
| Package Length | 6.8(Max)mm |
| Product Category | Power MOSFET |
| Supplier Package | IPAK |
| Maximum IDSS (uA) | 1 |
| Process Technology | DMOS |
| Структура | N-Channel |
| Standard Package Name | TO-251 |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 40 |
| Typical Rise Time (ns) | 90 |
| Особенности | - |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2500 |
| Typical Gate Charge @ Vgs (nC) | 4.8@5V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 95 |
| Typical Turn-On Delay Time (ns) | 8 |
| Maximum Drain-Source Voltage (V) | 60 |
| Typical Gate Plateau Voltage (V) | 4.3 |
| Typical Turn-Off Delay Time (ns) | 20 |
| Maximum Diode Forward Voltage (V) | 1.5 |
| Typical Gate to Drain Charge (nC) | 2.7 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Typical Gate to Source Charge (nC) | 1.6 |
| Typical Reverse Recovery Time (ns) | 45 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 11 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 270@25V |
| Typical Reverse Recovery Charge (nC) | 45 |
| Maximum Drain-Source Resistance (mOhm) | 115@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 44 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2.5 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 17@25V |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 110 |
| Пороговое напряжение на затворе | 4V@250uA |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 11 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |