FQPF8N80CYDTU, Транзистор: N-MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062567957
- Артикул
- FQPF8N80CYDTU
- Бренд
- ON Semiconductor***
- Tab
- Tab
- PPAP
- No
- SVHC
- Yes
- Mounting
- Through Hole
Цена по запросу
(от 331 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 800V 8A с 3-контактным разъемом (3+ язычка) для трубки TO-220F
Технические параметры
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| Mounting | Through Hole |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Вес, г | 2 |
| PCB changed | 3 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 4.7 mm |
| Package Length | 10.16 mm |
| Product Category | Power MOSFET |
| Supplier Package | TO-220F |
| Maximum IDSS (uA) | 10 |
| Process Technology | DMOS |
| Standard Package Name | TO |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 70 |
| Typical Rise Time (ns) | 110 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 59000 |
| Typical Gate Charge @ 10V (nC) | 35 |
| Typical Gate Charge @ Vgs (nC) | 35@10V |
| Maximum Gate-Source Voltage (V) | ±30 |
| Typical Output Capacitance (pF) | 135 |
| Typical Turn-On Delay Time (ns) | 40 |
| Maximum Drain-Source Voltage (V) | 800 |
| Typical Gate Plateau Voltage (V) | 6.5 |
| Typical Turn-Off Delay Time (ns) | 65 |
| Maximum Diode Forward Voltage (V) | 1.4 |
| Typical Gate to Drain Charge (nC) | 14 |
| Maximum Gate Threshold Voltage (V) | 5 |
| Minimum Gate Threshold Voltage (V) | 3 |
| Typical Gate to Source Charge (nC) | 10 |
| Typical Reverse Recovery Time (ns) | 690 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 8 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 1580@25V |
| Typical Reverse Recovery Charge (nC) | 8200 |
| Maximum Drain-Source Resistance (mOhm) | 1550@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum Positive Gate-Source Voltage (V) | 30 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 32 |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 1290@10V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 13@25V |