FQP47P06, Транзистор P-MOSFET, полевой, -60В, -33,2А, 160Вт, TO220, QFET®
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- Код товара
- 8062242563
- Артикул
- FQP47P06
- Бренд
- ON Semiconductor***
- Case
- TO220AB
- Series
- QFET
- Mounting
- THT
- Pin Count
- 3
Цена по запросу
(от 495,97 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор P-MOSFET, полевой, -60В, -33,2А, 160Вт, TO220, QFET® Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Case | TO220AB |
| Series | QFET |
| Mounting | THT |
| Pin Count | 3 |
| Technology | QFET® |
| Вес, г | 2.07 |
| Gate charge | 110nC |
| Channel Mode | Enhancement |
| Channel Type | P |
| Manufacturer | ONSEMI |
| Package Type | TO-220AB |
| Polarisation | unipolar |
| Drain current | -33.2A |
| Mounting Type | Through Hole |
| Product Width | 4.5mm |
| Product Height | 9.2mm |
| Product Length | 9.9mm |
| Kind of channel | enhanced |
| Kind of package | tube |
| Supplier Package | TO-220 |
| Power dissipation | 160W |
| Typical Fall Time | 195ns |
| Typical Rise Time | 450ns |
| Type of transistor | P-MOSFET |
| Gate-source voltage | ±25V |
| On-state resistance | 26mΩ |
| Transistor Material | Si |
| Drain-source voltage | -60V |
| разрешение | Power MOSFET |
| Transistor Configuration | Single |
| конфигурация | Single |
| Maximum Power Dissipation | 160 W |
| Typical Gate Charge @ Vgs | 84 nC @ 10 V |
| Typical Turn-On Delay Time | 50ns |
| Maximum Gate Source Voltage | ±25V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 100ns |
| Maximum Drain Source Voltage | 60V |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55°C |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Drain Source Resistance | 0.026? |
| Maximum Continuous Drain Current | 47A |
| монтаж (установка) | Through Hole |
| максимальная рабочая температура | 175°C |