FQD8P10TM, MOSFETs 100V P-Channel QFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004834593
- Артикул
- FQD8P10TM
- Бренд
- ON Semiconductor***
- Case
- DPAK
- Type:
- MOSFET
- Width
- 6.1mm
- Brand:
- onsemi/Fairchild
Цена по запросу
(от 98,76 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор P-MOSFET, полевой, -100В, -4,2А, 44Вт, DPAK, QFET® Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Case | DPAK |
| Type: | MOSFET |
| Width | 6.1mm |
| Brand: | onsemi/Fairchild |
| Series | QFETВ® |
| Series: | FQD8P10 |
| FET Type | P-Channel |
| Mounting | SMD |
| Packaging | Cut Tape(CT) |
| Pin Count | 3 |
| Vgs (Max) | В±30V |
| Fall Time: | 35 ns |
| Rise Time: | 110 ns |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 0.26 |
| FET Feature | - |
| Gate charge | 15nC |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Manufacturer | ON Semiconductor |
| Package Type | DPAK(TO-252) |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Drain current | -4.2A |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | TO-252-3, DPak(2 Leads+Tab), SC-63 |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Mounting Style: | SMD/SMT |
| Package / Case: | DPAK-3 |
| Part # Aliases: | FQD8P10TM_NL |
| Transistor Type: | 1 P-Channel |
| Power dissipation | 44W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 15 nC |
| Type of transistor | P-MOSFET |
| Vgs(th) (Max) @ Id | 4V @ 250ВµA |
| Структура | P-Channel |
| Gate-source voltage | ±30V |
| Number of Channels: | 1 Channel |
| On-state resistance | 530mΩ |
| Transistor Material | Si |
| Drain-source voltage | -100V |
| Transistor Polarity: | P-Channel |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Power Dissipation (Pd) | 2.5W;44W |
| Rds On (Max) @ Id, Vgs | 530mOhm @ 3.3A, 10V |
| Особенности | - |
| Pd - Power Dissipation: | 2.5 W |
| Power Dissipation (Max) | 2.5W(Ta), 44W(Tc) |
| Supplier Device Package | D-Pak |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 2.5 W |
| Typical Gate Charge @ Vgs | 12 nC @ 10 V |
| Total Gate Charge (Qg@Vgs) | 15nC@10V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 11 ns |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| Input Capacitance (Ciss@Vds) | 470pF@25V |
| Maximum Drain Source Voltage | 100 V |
| Typical Turn-Off Delay Time: | 20 ns |
| Continuous Drain Current (Id) | 6.6A |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Drain to Source Voltage (Vdss) | 100V |
| Id - Continuous Drain Current: | 6.6 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 4.1 S |
| Maximum Drain Source Resistance | 530 mΩ |
| Maximum Continuous Drain Current | 6.6 A |
| Rds On - Drain-Source Resistance: | 530 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 470pF @ 25V |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Current - Continuous Drain (Id) @ 25В°C | 6.6A(Tc) |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 100 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |