FQD7P20TM, Транзистор P-MOSFET, полевой, -200В, -3,6А, 55Вт, DPAK
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8048099438
- Артикул
- FQD7P20TM
- Бренд
- ON Semiconductor***
- Type:
- MOSFET
- Width
- 6.22mm
- Brand:
- onsemi/Fairchild
- Series:
- FQD7P20
Цена по запросу
(от 160 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Линейка P-канальныx МОП-транзисторов ON Semiconductors производится с использованием запатентованной компанией ON Semi теxнологии DMOS с высокой плотностью ячеек.
Технические параметры
| Type: | MOSFET |
| Width | 6.22mm |
| Brand: | onsemi/Fairchild |
| Series: | FQD7P20 |
| Pin Count | 3 |
| Fall Time: | 42 ns |
| Rise Time: | 110 ns |
| Вес, г | 0.09 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | DPAK(TO-252) |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Package/Case: | DPAK-3(TO-252-3) |
| Product Type: | MOSFET |
| REACH - SVHC: | Details |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | FQD7P20TM_NL |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 25 nC |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | P-Channel |
| Pd - Power Dissipation: | 2.5 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 55 W |
| Typical Gate Charge @ Vgs | 19 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 15 ns |
| Maximum Drain Source Voltage | 200 V |
| Typical Turn-Off Delay Time: | 30 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 5.7 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 3V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 3.7 S |
| Maximum Drain Source Resistance | 690 mΩ |
| Maximum Continuous Drain Current | 5.7 A |
| Rds On - Drain-Source Resistance: | 690 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Vgs th - Gate-Source Threshold Voltage: | 5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |