FQD6N40CTM, MOSFETs 400V N-Channel Advance QFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8006198680
- Артикул
- FQD6N40CTM
- Бренд
- ON Semiconductor***
- RoHS
- Details
- Type
- MOSFET
- Brand
- ON Semiconductor/Fairchild
- Width
- 6.22 mm
Цена по запросу
(от 158,72 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-MOSFET, полевой, 400В, 2,7А, 48Вт, DPAK Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| RoHS | Details |
| Type | MOSFET |
| Brand | ON Semiconductor/Fairchild |
| Width | 6.22 mm |
| Height | 2.39 mm |
| Length | 6.73 mm |
| Series | FQD6N40C |
| Fall Time | 38 ns |
| Packaging | Cut Tape |
| Rise Time | 65 ns |
| Technology | Si |
| Вес, г | 1 |
| Unit Weight | 0.009184 oz |
| Channel Mode | Enhancement |
| Manufacturer | ON Semiconductor |
| Configuration | Single |
| Mounting Style | SMD/SMT |
| Package / Case | TO-252-3 |
| Part # Aliases | FQD6N40CTM_NL |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Factory Pack Quantity | 2500 |
| Pd - Power Dissipation | 2.5 W |
| Vgs - Gate-Source Voltage | 30 V |
| Typical Turn-On Delay Time | 13 ns |
| Typical Turn-Off Delay Time | 21 ns |
| Id - Continuous Drain Current | 4.5 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 4.7 S |
| Rds On - Drain-Source Resistance | 1 Ohms |
| Vds - Drain-Source Breakdown Voltage | 400 V |