FQD18N20V2TM Digital Transistor, 2 + Tab-Pin DPAK
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8014513852
- Артикул
- FQD18N20V2TM
- Бренд
- ON Semiconductor***
- Case
- DPAK
- Type:
- MOSFET
- Brand:
- onsemi/Fairchild
- Mounting
- SMD
Цена по запросу
(от 171,39 ₽)
Минимальный заказ: 10 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Этот МОП-транзистор с N-канальным усилением мощности изготовлен с использованием запатентованной теxнологии planar stripe и DMOS.
Технические параметры
| Case | DPAK |
| Type: | MOSFET |
| Brand: | onsemi/Fairchild |
| Mounting | SMD |
| Pin Count | 2+Tab |
| Fall Time: | 62 ns |
| Rise Time: | 133 ns |
| Technology | QFET® |
| Вес, г | 1 |
| Gate charge | 26nC |
| Technology: | Si |
| Manufacturer | ONSEMI |
| Package Type | DPAK |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Корпус | TO-252/DPAK |
| Channel Mode: | Enhancement |
| Drain current | 9.75A |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Package/Case: | DPAK-3(TO-252-3) |
| Product Type: | MOSFET |
| Configuration: | Single |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 N-Channel |
| Power dissipation | 83W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 26 nC |
| Type of transistor | N-MOSFET |
| Gate-source voltage | ±30V |
| Number of Channels: | 1 Channel |
| On-state resistance | 0.14Ω |
| Drain-source voltage | 200V |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 2500 |
| Power Dissipation (Pd) | 2.5W;83W |
| Pd - Power Dissipation: | 2.5 W |
| Maximum Power Dissipation | 83 W |
| Total Gate Charge (Qg@Vgs) | 26nC@10V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 16 ns |
| Input Capacitance (Ciss@Vds) | 1.08nF@25V |
| Typical Turn-Off Delay Time: | 38 ns |
| Continuous Drain Current (Id) | 15A |
| Maximum Operating Temperature | +150 °C |
| Id - Continuous Drain Current: | 15 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 11 S |
| Rds On - Drain-Source Resistance: | 140 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |