FQB8N60CTM, Trans MOSFET N-CH 600V 7.5A 3-Pin(2+Tab) D2PAK T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8002306678
- Артикул
- FQB8N60CTM
- Бренд
- ON Semiconductor***
- Tab
- Tab
- PPAP
- No
- SVHC
- Yes
- Mounting
- Surface Mount
Цена по запросу
(от 680 ₽)
Минимальный заказ: 45 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 600V 7.5A 3-контактный (2+Tab) D2PAK T/R
Технические параметры
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 2 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 9.65(Max)mm |
| Package Length | 10.67(Max)mm |
| Product Category | Power MOSFET |
| Supplier Package | D2PAK |
| Maximum IDSS (uA) | 1 |
| Process Technology | DMOS |
| Структура | N-Channel |
| Standard Package Name | TO-263 |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 64.5 |
| Typical Rise Time (ns) | 60.5 |
| Особенности | высоковольтный |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 3130 |
| Typical Gate Charge @ 10V (nC) | 28 |
| Typical Gate Charge @ Vgs (nC) | 28@10V |
| Maximum Gate Source Voltage (V) | ±30 |
| Typical Output Capacitance (pF) | 105 |
| Typical Turn-On Delay Time (ns) | 16.5 |
| Maximum Drain Source Voltage (V) | 600 |
| Typical Gate Plateau Voltage (V) | 5 |
| Typical Turn-Off Delay Time (ns) | 81 |
| Maximum Diode Forward Voltage (V) | 1.4 |
| Typical Gate to Drain Charge (nC) | 12 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Gate to Source Charge (nC) | 4.5 |
| Typical Reverse Recovery Time (ns) | 365 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 7.5 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 965@25V |
| Typical Reverse Recovery Charge (nC) | 3400 |
| Maximum Drain Source Resistance (MOhm) | 1200@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 30 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 30 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 12@25V |
| Пороговое напряжение на затворе | 2…4 В |
| Максимальное напряжение сток-исток Uси,В | 600 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 7.5 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |