FQB5N90TM Digital Transistor, 2 + Tab-Pin D2PAK
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8014513848
- Артикул
- FQB5N90TM
- Бренд
- ON Semiconductor***
- RoHS
- Details
- Type
- MOSFET
- Brand
- ON Semiconductor/Fairchild
- Width
- 9.65 mm
Цена по запросу
(от 410 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Этот МОП-транзистор с N-канальным усилением мощности изготовлен с использованием запатентованной теxнологии planar stripe и DMOS.
Технические параметры
| RoHS | Details |
| Type | MOSFET |
| Brand | ON Semiconductor/Fairchild |
| Width | 9.65 mm |
| Height | 4.83 mm |
| Length | 10.67 mm |
| Series | FQB5N90 |
| Fall Time | 50 ns |
| Packaging | Reel |
| Pin Count | 2+Tab |
| Rise Time | 65 ns |
| Technology | Si |
| Вес, г | 0.05 |
| Unit Weight | 0.046296 oz |
| Channel Mode | Enhancement |
| Manufacturer | ON Semiconductor |
| Package Type | D2PAK |
| Корпус | d2pak |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT |
| Package / Case | TO-263-3 |
| Part # Aliases | FQB5N90TM_NL |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Factory Pack Quantity | 800 |
| Pd - Power Dissipation | 3.13 W |
| Power Dissipation (Pd) | 3.13W;158W |
| Maximum Power Dissipation | 158 W |
| Vgs - Gate-Source Voltage | 30 V |
| Total Gate Charge (Qg@Vgs) | 40nC@10V |
| Typical Turn-On Delay Time | 28 ns |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 65 ns |
| Input Capacitance (Ciss@Vds) | 1.55nF@25V |
| Continuous Drain Current (Id) | 5.4A |
| Id - Continuous Drain Current | 5.4 A |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 5.6 S |
| Rds On - Drain-Source Resistance | 2.3 Ohms |
| Vds - Drain-Source Breakdown Voltage | 900 V |