FQB47P06TM-AM002,Power MOSFET, P Channel, 60 V, 47 A, 0.026 ohm, TO-263 (D2PAK), Surface Mount
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8247195616
- Артикул
- FQB47P06TM-AM002
- Бренд
- ON Semiconductor***
- Case
- D2PAK
- Type:
- MOSFET
- Width
- 9.65mm
- Brand:
- onsemi/Fairchild
Цена по запросу
(от 743 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Линейка P-канальныx МОП-транзисторов ON Semiconductors производится с использованием запатентованной компанией ON Semi теxнологии DMOS с высокой плотностью ячеек.
Технические параметры
| Case | D2PAK |
| Type: | MOSFET |
| Width | 9.65mm |
| Brand: | onsemi/Fairchild |
| Mounting | SMD |
| Pin Count | 3 |
| Fall Time: | 195 ns |
| Rise Time: | 450 ns |
| Technology | QFET® |
| Вес, г | 1.733 |
| Gate charge | 110nC |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Manufacturer | ONSEMI |
| Package Type | D2PAK(TO-263) |
| Polarisation | unipolar |
| Subcategory: | Transistors |
| Корпус | TO-263 |
| Channel Mode: | Enhancement |
| Drain current | -33.2A |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Package/Case: | D2PAK-3(TO-263-3) |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | FQB47P06TM_AM002 |
| Transistor Type: | 1 P-Channel |
| Power dissipation | 160W |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 110 nC |
| Type of transistor | P-MOSFET |
| Структура | P-Channel |
| Gate-source voltage | ±25V |
| Number of Channels: | 1 Channel |
| On-state resistance | 26mΩ |
| Transistor Material | Si |
| Drain-source voltage | -60V |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity: | 800 |
| Особенности | - |
| Pd - Power Dissipation: | 3.75 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 3.75 W |
| Typical Gate Charge @ Vgs | 84 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 50 ns |
| Maximum Drain Source Voltage | 60 V |
| Typical Turn-Off Delay Time: | 100 ns |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 47 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 21 S |
| Maximum Drain Source Resistance | 26 mΩ |
| Maximum Continuous Drain Current | 47 A |
| Rds On - Drain-Source Resistance: | 21 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Пороговое напряжение на затворе | 2…4 В |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 47 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 160 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 0.026 Ом |