FMMTA92TA, Bipolar (BJT) Single Transistor, PNP, 300 V, 200 mA, 330 mW, SOT-23, Surface Mount
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8893395312
- Артикул
- FMMTA92TA
- Бренд
- DIODES INC.
- MSL
- MSL 1-Unlimited
- PPAP
- No
- Type
- PNP
- Brand
- Diodes Incorporated
Цена по запросу
(от 45 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
FMMTA92 - это кремниевый плоский высоковольтный биполярный транзистор PNP, который обеспечивает рассеиваемую мощность 330 МВт и постоянный ток коллектора -200 мА. • Дополнительный NPN-транзистор типа FMMTA42 • Диапазон рабочиx температур от -55 до 150°C
Технические параметры
| MSL | MSL 1-Unlimited |
| PPAP | No |
| Type | PNP |
| Brand | Diodes Incorporated |
| Series | FMMTA |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Cut Tape or Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.03 |
| No. of Pins | 3Pins |
| PCB changed | 3 |
| Part Status | Active |
| Subcategory | Transistors |
| Manufacturer | Diodes Incorporated |
| Package Type | SOT-23 |
| Product Type | BJTs-Bipolar Transistors |
| Корпус | SOT-23(TO-236)| SOT23-3 |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| Transistor Type | PNP |
| Product Category | Bipolar Transistors-BJT |
| Supplier Package | SOT-23 |
| Power Dissipation | 330mW |
| Структура | pnp |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 50MHz |
| Factory Pack Quantity | 3000 |
| Standard Package Name | SOT |
| Transistor Case Style | SOT-23 |
| Pd - Power Dissipation | 330 mW |
| DC Current Gain HFE Max | 25 at 1 mA, 10 V |
| DC Current Gain hFE Min | 40hFE |
| Minimum DC Current Gain | 40 |
| Transistor Configuration | Single |
| Gain Bandwidth Product FT | 50 MHz |
| Maximum Power Dissipation | 330 mW |
| Operating Temperature Max | 150°C |
| Emitter- Base Voltage VEBO | -5 V |
| Maximum Operating Frequency | 50 MHz |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO | -300 V |
| Continuous Collector Current | 200mA |
| Maximum DC Collector Current | 0.2 A |
| Maximum Emitter Base Voltage | 5 V |
| Collector Emitter Voltage Max | 300V |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Maximum Collector Base Voltage | 300 V |
| Maximum Power Dissipation (mW) | 350 |
| Maximum DC Collector Current (A) | 0.2 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Emitter Voltage | 300 V |
| Maximum Collector Base Voltage (V) | 300 |
| Maximum Transition Frequency (MHz) | 50(Min) |
| Collector- Emitter Voltage VCEO Max | -300 V |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector-Emitter Saturation Voltage | -0.5 V |
| Maximum Collector-Emitter Voltage (V) | 300 |
| Maximum Collector Cut-Off Current (nA) | 250 |
| Maximum Base Emitter Saturation Voltage (V) | 0.9@2mA@20mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.5@2mA@20mA |
| Максимально допустимый ток к ( Iк макс.А) | 200 mA |