FMMT6517TA, 50nA 350V 310mW 20@50mA,10V 500mA 50MHz 1V@50mA,5mA NPN -55°C~+150°C@(Tj) SOT-23 BIpolar TransIstors - BJT
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017602393
- Артикул
- FMMT6517TA
- Бренд
- DIODES INC.
- ECCN
- EAR99
- PPAP
- No
- Type
- NPN
- HTSUS
- 8541.21.0095
Цена по запросу
(от 27,40 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярный (BJT) транзистор NPN 350 В 500 мА 50 МГц 330 МВт для поверxностного монтажа SOT-23-3
Технические параметры
| ECCN | EAR99 |
| PPAP | No |
| Type | NPN |
| HTSUS | 8541.21.0095 |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Series: | FMMT65 |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.03 |
| PCB changed | 3 |
| Part Status | Active |
| Power - Max | 330mW |
| RoHS Status | ROHS3 Compliant |
| Technology: | Si |
| REACH Status | REACH Unaffected |
| Subcategory: | Transistors |
| Корпус | SOT-23(TO-236) |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Package/Case: | SOT-23-3 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Style: | SMD/SMT |
| Transistor Type | NPN |
| Product Category | Bipolar Small Signal |
| Supplier Package | SOT-23 |
| Power Dissipation | 350мВт |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Base Product Number | FMMT6517 -> |
| Transistor Polarity: | NPN |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Standard Package Name | SOT-23 |
| Frequency - Transition | 50MHz |
| DC Current Gain hFE Min | 15hFE |
| Pd - Power Dissipation: | 310 mW |
| Supplier Device Package | SOT-23-3 |
| DC Current Gain hFE Max: | 20 at 1 mA, 10 V |
| Квалификация | - |
| Gain Bandwidth Product fT: | 50 MHz |
| Emitter- Base Voltage VEBO: | 7 V |
| Number of Elements per Chip | 1 |
| Continuous Collector Current | 500мА |
| Collector Emitter Voltage Max | 350В |
| Collector- Base Voltage VCBO: | 350 V |
| Continuous Collector Current: | 0.5 A |
| Maximum DC Collector Current: | 500 mA |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 5mA, 50mA |
| Current - Collector (Ic) (Max) | 500mA |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 350 |
| Minimum Operating Temperature: | -55 C |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Усиление Тока hFE | 15hFE |
| Maximum DC Collector Current (A) | 0.5 |
| Maximum Emitter Base Voltage (V) | 7 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Линейка Продукции | - |
| Maximum Collector Base Voltage (V) | 350 |
| Maximum Transition Frequency (MHz) | 50(Min) |
| Частота Перехода ft | 50МГц |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Количество Выводов | 3вывод(-ов) |
| Монтаж транзистора | Surface Mount |
| Collector- Emitter Voltage VCEO Max: | 350 V |
| Collector-Emitter Saturation Voltage: | 1 V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 50mA, 10V |
| Maximum Collector-Emitter Voltage (V) | 350 |
| Maximum Base Emitter Saturation Voltage (V) | 0.8 1mA 10mA|0.85 2mA 20mA|0.9 3mA 30mA |
| Voltage - Collector Emitter Breakdown (Max) | 350V |
| Полярность Транзистора | NPN |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3 1mA 10mA|0.35 2mA 20mA|0.5 3mA 30mA|1 5mA 50mA |
| Стиль Корпуса Транзистора | SOT-23 |
| Максимальная Рабочая Температура | 150°C |
| Граничная частота коэффициента передачи тока fгр.МГц | 50 |