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FMMT6517TA, Bipolar Transistors - BJT NPN High Voltage

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Код товара
8004585519
Артикул
FMMT6517TA
Бренд
DIODES INC.
ECCN
EAR99
PPAP
No
Type
NPN
HTSUS
8541.21.0095
Цена по запросу
(от 50,75 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Биполярный (BJT) транзистор NPN 350 В 500 мА 50 МГц 330 МВт для поверxностного монтажа SOT-23-3

Технические параметры

ECCNEAR99
PPAPNo
TypeNPN
HTSUS8541.21.0095
Brand:Diodes Incorporated
EU RoHSCompliant
PackageTape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Series:FMMT65
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
Вес, г0.01
PCB changed3
Part StatusActive
Power - Max330mW
RoHS StatusROHS3 Compliant
Technology:Si
REACH StatusREACH Unaffected
Subcategory:Transistors
ConfigurationSingle
Manufacturer:Diodes Incorporated
Mounting TypeSurface Mount
Package/Case:SOT-23-3
Product Type:BJTs-Bipolar Transistors
Configuration:Single
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting Style:SMD/SMT
Transistor TypeNPN
Product CategoryBipolar Small Signal
Supplier PackageSOT-23
Power Dissipation350мВт
Product Category:Bipolar Transistors-BJT
Структураnpn
Base Product NumberFMMT6517 ->
Transistor Polarity:NPN
Operating Temperature-55В°C ~ 150В°C (TJ)
Standard Package NameSOT-23
Frequency - Transition50MHz
DC Current Gain hFE Min15hFE
Pd - Power Dissipation:310 mW
Supplier Device PackageSOT-23-3
DC Current Gain hFE Max:20 at 1 mA, 10 V
Квалификация-
Gain Bandwidth Product fT:50 MHz
Emitter- Base Voltage VEBO:7 V
Number of Elements per Chip1
Continuous Collector Current500мА
Collector Emitter Voltage Max350В
Collector- Base Voltage VCBO:350 V
Continuous Collector Current:0.5 A
Maximum DC Collector Current:500 mA
Vce Saturation (Max) @ Ib, Ic1V @ 5mA, 50mA
Current - Collector (Ic) (Max)500mA
Maximum Operating Temperature:+150 C
Maximum Power Dissipation (mW)350
Minimum Operating Temperature:-55 C
Current - Collector Cutoff (Max)50nA (ICBO)
DC Усиление Тока hFE15hFE
Maximum DC Collector Current (A)0.5
Maximum Emitter Base Voltage (V)7
Moisture Sensitivity Level (MSL)1 (Unlimited)
Линейка Продукции-
Maximum Collector Base Voltage (V)350
Maximum Transition Frequency (MHz)50(Min)
Частота Перехода ft50МГц
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Количество Выводов3вывод(-ов)
Монтаж транзистораSurface Mount
Collector- Emitter Voltage VCEO Max:350 V
Collector-Emitter Saturation Voltage:1 V
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 50mA, 10V
Maximum Collector-Emitter Voltage (V)350
Maximum Base Emitter Saturation Voltage (V)0.8 1mA 10mA|0.85 2mA 20mA|0.9 3mA 30mA
Voltage - Collector Emitter Breakdown (Max)350V
Полярность ТранзистораNPN
Factory Pack Quantity: Factory Pack Quantity:3000
Maximum Collector-Emitter Saturation Voltage (V)0.3 1mA 10mA|0.35 2mA 20mA|0.5 3mA 30mA|1 5mA 50mA
Стиль Корпуса ТранзистораSOT-23
Максимальная Рабочая Температура150°C

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