Биполярный транзистор FMMT618TA
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062671631
- Артикул
- FMMT618TA
- Бренд
- DIODES INC.
- MSL
- MSL 1-Unlimited
- PPAP
- No
- Type
- NPN
- Brand:
- Diodes Incorporated
Цена по запросу
(от 42 ₽)
Минимальный заказ: 1876 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans GP BJT NPN 20 В 2,5 А 625 МВт 3-контактный SOT-23 T/R
Технические параметры
| MSL | MSL 1-Unlimited |
| PPAP | No |
| Type | NPN |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant |
| Series: | FMMT618 |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.05 |
| No. of Pins | 3Pins |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Package Type | SOT-23 |
| Subcategory: | Transistors |
| Корпус | SOT23-3 |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Transistor Type | NPN |
| Product Category | Bipolar Small Signal |
| Supplier Package | SOT-23 |
| Power Dissipation | 625mW |
| Product Category: | Bipolar Transistors-BJT |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN; Collector Emitter Voltage V(br)ceo |
| Transistor Polarity: | NPN |
| Transition Frequency | 140MHz |
| Standard Package Name | SOT |
| Transistor Case Style | SOT-23 |
| Collector Current (Ic) | 2.5A |
| Power Dissipation (Pd) | 625mW |
| DC Current Gain hFE Min | 450hFE |
| Minimum DC Current Gain | 200 10mA 2V|300 200mA 2V|200 2A 2V|100 6A 2V |
| Pd - Power Dissipation: | 625 mW |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 625 mW |
| Operating Temperature Max | 150°C |
| Transition Frequency (fT) | 140MHz |
| Gain Bandwidth Product fT: | 140 MHz |
| Supplier Temperature Grade | Automotive |
| Emitter- Base Voltage VEBO: | 7 V |
| Maximum Operating Frequency | 140 MHz |
| Number of Elements per Chip | 1 |
| Continuous Collector Current | 2.5A |
| DC Current Gain (hFE@Ic,Vce) | 200@2A, 2V |
| Maximum DC Collector Current | 2.5 A |
| Maximum Emitter Base Voltage | 5 V |
| Collector Emitter Voltage Max | 20V |
| Collector- Base Voltage VCBO: | 20 V |
| Continuous Collector Current: | 2.5 A |
| Maximum DC Collector Current: | 2.5 A |
| Maximum Operating Temperature | +150 °C |
| Maximum Collector Base Voltage | 20 V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 625 |
| Minimum Operating Temperature: | -55 C |
| Collector Cut-Off Current (Icbo) | 100nA |
| Maximum DC Collector Current (A) | 2.5 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Emitter Voltage | 20 V |
| Maximum Collector Base Voltage (V) | 20 |
| Maximum Transition Frequency (MHz) | 140(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector- Emitter Voltage VCEO Max: | 20 V |
| Collector-Emitter Saturation Voltage: | 130 mV |
| Maximum Collector-Emitter Voltage (V) | 20 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Collector-Emitter Breakdown Voltage (Vceo) | 20V |
| Maximum Base Emitter Saturation Voltage (V) | 1 50mA 2.5A |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.015 10mA 0.1A|0.15 10mA 1A|0.2 50mA 2.5A |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 130mV@2.5A, 50mA |