FMMT555TA, Trans GP BJT PNP 150V 1A 500mW 3-Pin SOT-23 T/R

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- Код товара
- 8001123218
- Артикул
- FMMT555TA
- Бренд
- DIODES INC.
- Case
- SOT23
- Brand:
- Diodes Incorporated
- Series:
- FMMT55
- Mounting
- SMD
Цена по запросу
(от 21 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Case | SOT23 |
| Brand: | Diodes Incorporated |
| Series: | FMMT55 |
| Mounting | SMD |
| Frequency | 100MHz |
| Pin Count | 3 |
| Вес, г | 10 |
| Technology: | Si |
| Manufacturer | DIODES INCORPORATED |
| Package Type | SOT-23 |
| Polarisation | bipolar |
| Subcategory: | Transistors |
| Корпус | SOT-23(TO-236) |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Kind of package | reel, tape |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Transistor Type | PNP |
| Collector current | 1A |
| Power dissipation | 0.5W |
| Product Category: | Bipolar Transistors-BJT |
| Type of transistor | PNP |
| Структура | pnp |
| Transistor Polarity: | PNP |
| Collector Current (Ic) | 1A |
| Power Dissipation (Pd) | 500mW |
| Minimum DC Current Gain | 50 |
| Pd - Power Dissipation: | 500 mW |
| DC Current Gain hFE Max: | 50 at 10 mA, 10 V |
| Transistor Configuration | Single |
| Collector-emitter voltage | 150V |
| Maximum Power Dissipation | 500 mW |
| Transition Frequency (fT) | 100MHz |
| Gain Bandwidth Product fT: | 100 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| Maximum Operating Frequency | 100 MHz |
| Number of Elements per Chip | 1 |
| DC Current Gain (hFE@Ic,Vce) | 50@300mA, 10V |
| Maximum DC Collector Current | 1 A |
| Maximum Emitter Base Voltage | -5 V |
| Collector- Base Voltage VCBO: | 160 V |
| Continuous Collector Current: | -1 A |
| Maximum DC Collector Current: | 1 A |
| Maximum Operating Temperature | +150 °C |
| Maximum Collector Base Voltage | -160 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 50 at 10 mA, 10 V, 50 at 300 mA, 10 V |
| Collector Cut-Off Current (Icbo) | 100nA |
| Maximum Collector Emitter Voltage | 150 V |
| Collector- Emitter Voltage VCEO Max: | 150 V |
| Collector-Emitter Saturation Voltage: | 300 mV |
| Collector-Emitter Breakdown Voltage (Vceo) | 150V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 300mV@10mA, 100mA |