FMMT551TA, Bipolar Transistors - BJT PNP Medium Power
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004841674
- Артикул
- FMMT551TA
- Бренд
- DIODES INC.
- Brand
- Diodes Incorporated
- Brand:
- Diodes Incorporated
- Series
- FMMT55
- Series:
- FMMT55
Цена по запросу
(от 200 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: PNP, биполярный, 60В, 1А, 500мВт, SOT23 Характеристики Категория Транзистор Тип биполярный Вид PNP
Технические параметры
| Brand | Diodes Incorporated |
| Brand: | Diodes Incorporated |
| Series | FMMT55 |
| Series: | FMMT55 |
| Packaging | Cut Tape or Reel |
| Вес, г | 0.01 |
| Subcategory | Transistors |
| Technology: | Si |
| Manufacturer | Diodes Incorporated |
| Product Type | BJTs-Bipolar Transistors |
| Subcategory: | Transistors |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Product Category | Bipolar Transistors-BJT |
| Power Dissipation | 500мВт |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Transistor Polarity | PNP |
| Transistor Polarity: | PNP |
| Factory Pack Quantity | 3000 |
| Pd - Power Dissipation | 500 mW |
| DC Current Gain hFE Min | 10hFE |
| Pd - Power Dissipation: | 500 mW |
| Gain Bandwidth Product FT | 150 MHz |
| Emitter- Base Voltage VEBO | 5 V |
| Gain Bandwidth Product fT: | 150 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| Collector- Base Voltage VCBO | -80 V |
| Continuous Collector Current | -1 A |
| Maximum DC Collector Current | 1 A |
| Collector Emitter Voltage Max | 60В |
| Collector- Base Voltage VCBO: | 80 V |
| Continuous Collector Current: | -1 A |
| Maximum DC Collector Current: | 1 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Усиление Тока hFE | 10hFE |
| Частота Перехода ft | 150МГц |
| Collector- Emitter Voltage VCEO Max | -60 V |
| Количество Выводов | 3вывод(-ов) |
| Монтаж транзистора | Surface Mount |
| Collector- Emitter Voltage VCEO Max: | 60 V |
| Collector-Emitter Saturation Voltage | -0.35 V |
| Collector-Emitter Saturation Voltage: | 350 mV |
| Полярность Транзистора | PNP |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Стиль Корпуса Транзистора | SOT-23 |
| Максимальная Рабочая Температура | 150°C |