FMMT491TC, Bipolar Transistors - BJT NPN Medium Power
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004841668
- Артикул
- FMMT491TC
- Бренд
- DIODES INC.
- Brand
- Diodes Incorporated
- Brand:
- Diodes Incorporated
- Series
- FMMT49
- Series:
- FMMT49
Цена по запросу
(от 65 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand | Diodes Incorporated |
| Brand: | Diodes Incorporated |
| Series | FMMT49 |
| Series: | FMMT49 |
| Packaging | Reel |
| Вес, г | 0.01 |
| Subcategory | Transistors |
| Technology: | Si |
| Manufacturer | Diodes Incorporated |
| Product Type | BJTs-Bipolar Transistors |
| Subcategory: | Transistors |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Transistor Type | NPN |
| Product Category | Bipolar Transistors-BJT |
| Power Dissipation | 500мВт |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity | NPN |
| Transistor Polarity: | NPN |
| Factory Pack Quantity | 10000 |
| Collector Current (Ic) | 1A |
| Pd - Power Dissipation | 500 mW |
| Power Dissipation (Pd) | 500mW |
| DC Current Gain hFE Min | 80hFE |
| Pd - Power Dissipation: | 500 mW |
| Квалификация | - |
| Gain Bandwidth Product FT | 150 MHz |
| Transition Frequency (fT) | 150MHz |
| Emitter- Base Voltage VEBO | 5 V |
| Gain Bandwidth Product fT: | 150 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| Collector- Base Voltage VCBO | 80 V |
| Continuous Collector Current | 1 A |
| DC Current Gain (hFE@Ic,Vce) | 100@500mA, 5V |
| Maximum DC Collector Current | 1 A |
| Collector Emitter Voltage Max | 60В |
| Collector- Base Voltage VCBO: | 80 V |
| Continuous Collector Current: | 1 A |
| Maximum DC Collector Current: | 1 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Collector Cut-Off Current (Icbo) | 100nA |
| DC Усиление Тока hFE | 80hFE |
| Линейка Продукции | - |
| Частота Перехода ft | 150МГц |
| Collector- Emitter Voltage VCEO Max | 60 V |
| Количество Выводов | 3вывод(-ов) |
| Монтаж транзистора | Surface Mount |
| Collector- Emitter Voltage VCEO Max: | 60 V |
| Collector-Emitter Saturation Voltage | 160 mV |
| Collector-Emitter Saturation Voltage: | 160 mV |
| Collector-Emitter Breakdown Voltage (Vceo) | 60V |
| Полярность Транзистора | NPN |
| Factory Pack Quantity: Factory Pack Quantity: | 10000 |
| Стиль Корпуса Транзистора | SOT-23 |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 160mV@1A, 100mA |
| Максимальная Рабочая Температура | 150°C |