FMMT417TD, Bipolar Transistors - BJT NPN Avalanche
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004841660
- Артикул
- FMMT417TD
- Бренд
- DIODES INC.
- RoHS
- Details
- Brand
- Diodes Incorporated
- Width
- 1.4 mm
- Brand:
- Diodes Incorporated
Цена по запросу
(от 1 254,06 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| RoHS | Details |
| Brand | Diodes Incorporated |
| Width | 1.4 mm |
| Brand: | Diodes Incorporated |
| Height | 1.1 mm |
| Length | 3 mm |
| Series | FMMT41 |
| Series: | FMMT41 |
| Packaging | Reel |
| Вес, г | 0.01 |
| Technology: | Si |
| Manufacturer | Diodes Incorporated |
| Subcategory: | Transistors |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Transistor Type | NPN |
| Product Category | Bipolar Transistors-BJT |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity | NPN |
| Transistor Polarity: | NPN |
| Factory Pack Quantity | 500 |
| Collector Current (Ic) | 500mA |
| Pd - Power Dissipation | 330 mW |
| Power Dissipation (Pd) | 330mW |
| DC Current Gain hFE Max | 25 at 10 mA at 10 V |
| Pd - Power Dissipation: | 500 mW |
| DC Current Gain hFE Max: | 25 at 10 mA, 10 V |
| Gain Bandwidth Product fT | 40 MHz |
| Transition Frequency (fT) | 40MHz |
| Emitter- Base Voltage VEBO | 6 V |
| Gain Bandwidth Product fT: | 40 MHz |
| Emitter- Base Voltage VEBO: | 6 V |
| Collector- Base Voltage VCBO | 320 V |
| Continuous Collector Current | 0.5 A |
| DC Current Gain (hFE@Ic,Vce) | 25@10mA, 10V |
| Maximum DC Collector Current | 0.5 A |
| Collector- Base Voltage VCBO: | 320 V |
| Continuous Collector Current: | 500 mA |
| Maximum DC Collector Current: | 500 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| DC Collector/Base Gain hfe Min | 25 at 10 mA at 10 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 25 at 10 mA, 10 V |
| Collector Cut-Off Current (Icbo) | 100nA |
| Collector- Emitter Voltage VCEO Max | 100 V |
| Collector- Emitter Voltage VCEO Max: | 100 V |
| Collector-Emitter Saturation Voltage | 0.5 V |
| Collector-Emitter Saturation Voltage: | 500 mV |
| Collector-Emitter Breakdown Voltage (Vceo) | 100V |
| Factory Pack Quantity: Factory Pack Quantity: | 500 |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 500mV@10mA, 1mA |