FJV992FMTF PNP Transistor, -50 mA, -120 V, 3-Pin SOT-23
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8014595602
- Артикул
- FJV992FMTF
- Бренд
- ON Semiconductor***
- RoHS
- Details
- Brand
- ON Semiconductor/Fairchild
- Width
- 1.3 mm
- Brand:
- onsemi/Fairchild
Цена по запросу
(от 27 ₽)
Минимальный заказ: 200 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Широкий ассортимент транзисторов с биполярным переxодом (BJT) обеспечивает комплексные решения для различныx применений в сxемотеxнике.
Технические параметры
| RoHS | Details |
| Brand | ON Semiconductor/Fairchild |
| Width | 1.3 mm |
| Brand: | onsemi/Fairchild |
| Height | 0.93 mm |
| Length | 2.92 mm |
| Series | FJV992 |
| Series: | FJV992 |
| Packaging | Cut Tape or Reel |
| Pin Count | 3 |
| Вес, г | 1 |
| Subcategory | Transistors |
| Technology: | Si |
| Manufacturer | ON Semiconductor |
| Package Type | SOT-23 |
| Product Type | BJTs-Bipolar Transistors |
| Subcategory: | Transistors |
| Корпус | SOT-23(TO-236) |
| Configuration | Single |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Transistor Type | PNP |
| Product Category | Bipolar Transistors-BJT |
| Power Dissipation | 300мВт |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Transistor Polarity | PNP |
| Transistor Polarity: | PNP |
| Factory Pack Quantity | 3000 |
| Pd - Power Dissipation | 300 mW |
| DC Current Gain HFE Max | 800 |
| DC Current Gain hFE Min | 300hFE |
| Minimum DC Current Gain | 300 |
| Pd - Power Dissipation: | 300 mW |
| DC Current Gain hFE Max: | 800 |
| Transistor Configuration | Single |
| Gain Bandwidth Product FT | 50 MHz |
| Maximum Power Dissipation | 300 mW |
| Emitter- Base Voltage VEBO | -5 V |
| Gain Bandwidth Product fT: | 50 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| Maximum Operating Frequency | 50 MHz |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO | -120 V |
| Continuous Collector Current | -0.05 A |
| Maximum DC Collector Current | -50 mA |
| Maximum Emitter Base Voltage | -5 V |
| Collector Emitter Voltage Max | 120В |
| Collector- Base Voltage VCBO: | 120 V |
| Continuous Collector Current: | -50 mA |
| Maximum DC Collector Current: | 50 mA |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 C |
| DC Collector/Base Gain Hfe Min | 200 |
| Maximum Collector Base Voltage | -120 V |
| Maximum Operating Temperature: | +150 C |
| DC Collector/Base Gain hfe Min: | 200 |
| DC Усиление Тока hFE | 300hFE |
| Maximum Collector Emitter Voltage | -120 V |
| Частота Перехода ft | 50МГц |
| Collector- Emitter Voltage VCEO Max | -120 V |
| Количество Выводов | 3вывод(-ов) |
| Монтаж транзистора | Surface Mount |
| Collector- Emitter Voltage VCEO Max: | 120 V |
| Collector-Emitter Saturation Voltage | -300 mV |
| Collector-Emitter Saturation Voltage: | 300 mV |
| Полярность Транзистора | PNP |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Стиль Корпуса Транзистора | SOT-23 |
| Максимальная Рабочая Температура | 150°C |
| Уровень Чувствительности к Влажности (MSL) | MSL 1-Безлимитный |