FJI5603DTU NPN Digital Transistor, 800 V, 3 + Tab-Pin TO-262
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- Код товара
- 8014513865
- Артикул
- FJI5603DTU
- Бренд
- ON Semiconductor***
- Case
- I2PAK
- Brand:
- onsemi/Fairchild
- Series:
- FJI5603D
- Mounting
- THT
Цена по запросу
(от 300 ₽)
Минимальный заказ: 10 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
FJI5603D: Кремниевый NPN-транзистор с широкой безопасной рабочей зоной, небольшой разницей во времени xранения, встроенный диод свободного xода.
Технические параметры
| Case | I2PAK |
| Brand: | onsemi/Fairchild |
| Series: | FJI5603D |
| Mounting | THT |
| Frequency | 5MHz |
| Pin Count | 3+Tab |
| Packaging: | Tube |
| Вес, г | 1 |
| Technology: | Si |
| Current gain | 6…46 |
| Manufacturer | ONSEMI |
| Package Type | TO-262 |
| Polarisation | bipolar |
| Subcategory: | Transistors |
| Manufacturer: | onsemi |
| Mounting Type | Through Hole |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Kind of package | tube |
| Mounting Style: | SMD/SMT |
| Package / Case: | I2PAK-3 |
| Transistor Type | NPN |
| Collector current | 3A |
| Power dissipation | 100W |
| Product Category: | Bipolar Transistors-BJT |
| Type of transistor | NPN |
| Структура | npn |
| Transistor Polarity: | NPN |
| Minimum DC Current Gain | 20 |
| Pd - Power Dissipation: | 100 W |
| DC Current Gain hFE Max: | 20 |
| Transistor Configuration | Single |
| Collector-emitter voltage | 800V |
| Maximum Power Dissipation | 100 W |
| Gain Bandwidth Product fT: | 5 MHz |
| Emitter- Base Voltage VEBO: | 12 V |
| Number of Elements per Chip | 1 |
| Maximum Emitter Base Voltage | 12 V |
| Collector- Base Voltage VCBO: | 1.6 kV |
| Maximum DC Collector Current: | 3 A |
| Maximum Operating Temperature | +150 °C |
| Maximum Operating Temperature: | +150 C |
| DC Collector/Base Gain hfe Min: | 20 |
| Maximum Collector Emitter Voltage | 800 V |
| Collector- Emitter Voltage VCEO Max: | 800 V |
| Collector-Emitter Saturation Voltage: | 1.2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |