FJD5555TM, Транзистор: NPN
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8029736524
- Артикул
- FJD5555TM
- Бренд
- ON Semiconductor***
- Brand:
- onsemi/Fairchild
- Series:
- FJD5555
- Вес, г
- 1
- Technology:
- Si
Цена по запросу
(от 390 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярные транзисторы 400 В 1,34 Вт 20 при 800 мА, 3 В 5 А NPN TO-252AA - BJT ROHS
Технические параметры
| Brand: | onsemi/Fairchild |
| Series: | FJD5555 |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | onsemi |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | DPAK-3 |
| Transistor Type | NPN |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity: | NPN |
| Operating Temperature | - |
| Collector Current (Ic) | 5A |
| Power Dissipation (Pd) | 1.34W |
| Pd - Power Dissipation: | 1.34 W |
| Transition Frequency (fT) | - |
| Emitter- Base Voltage VEBO: | 14 V |
| DC Current Gain (hFE@Ic,Vce) | 20@800mA, 3V |
| Collector- Base Voltage VCBO: | 1.05 kV |
| Maximum DC Collector Current: | 5 A |
| Maximum Operating Temperature: | +150 C |
| Collector Cut-Off Current (Icbo) | - |
| Collector- Emitter Voltage VCEO Max: | 400 V |
| Collector-Emitter Saturation Voltage: | 1.5 V |
| Collector-Emitter Breakdown Voltage (Vceo) | 400V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 170mV@1A, 200mA |