FJA4313OTU, Trans GP BJT NPN 250V 17A 130000mW 3-Pin(3+Tab) TO-3P Tube
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8002306651
- Артикул
- FJA4313OTU
- Бренд
- ON Semiconductor***
- Brand:
- onsemi/Fairchild
- Series:
- FJA4313
- Packaging:
- Tube
- Вес, г
- 1
Цена по запросу
(от 1 090 ₽)
Минимальный заказ: 8 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | onsemi/Fairchild |
| Series: | FJA4313 |
| Packaging: | Tube |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | Transistors |
| Корпус | TO-3P |
| Manufacturer: | onsemi |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-3P-3 |
| Part # Aliases: | FJA4313OTU_NL |
| Transistor Type | NPN |
| Power Dissipation | 130Вт |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity: | NPN |
| Collector Current (Ic) | 17A |
| Power Dissipation (Pd) | 130W |
| DC Current Gain hFE Min | 80hFE |
| Pd - Power Dissipation: | 130 W |
| DC Current Gain hFE Max: | 160 |
| Transition Frequency (fT) | 30MHz |
| Gain Bandwidth Product fT: | 30 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| Continuous Collector Current | 17А |
| DC Current Gain (hFE@Ic,Vce) | 80@1A, 5V |
| Collector Emitter Voltage Max | 250В |
| Collector- Base Voltage VCBO: | 250 V |
| Continuous Collector Current: | 15 A |
| Maximum DC Collector Current: | 17 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -50 C |
| DC Collector/Base Gain hfe Min: | 55 |
| Collector Cut-Off Current (Icbo) | 5uA |
| DC Усиление Тока hFE | 80hFE |
| Линейка Продукции | FJA4313 |
| Частота Перехода ft | 30МГц |
| Количество Выводов | 3вывод(-ов) |
| Монтаж транзистора | Through Hole |
| Collector- Emitter Voltage VCEO Max: | 250 V |
| Collector-Emitter Saturation Voltage: | 400 mV |
| Collector-Emitter Breakdown Voltage (Vceo) | 250V |
| Полярность Транзистора | NPN |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Стиль Корпуса Транзистора | TO-3P |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 400mV@8A, 800mA |
| Максимальная Рабочая Температура | 150°C |