FGH40T65SHD-F155, Trans IGBT Chip N-CH 650V 80A 268W 3-Pin(3+Tab) TO-247 Tube
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8002308398
- Артикул
- FGH40T65SHD-F155
- Бренд
- ON Semiconductor***
- Tab
- Tab
- PPAP
- No
- SVHC
- Yes
- Brand:
- onsemi/Fairchild
Цена по запросу
(от 478 ₽)
Минимальный заказ: 171 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзисторная микросxема IGBT N-CH 650V 80A 268 Вт с 3-контактным разъемом (3 + язычка) TO-247
Технические параметры
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| Brand: | onsemi/Fairchild |
| Mounting | Through Hole |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Packaging: | Tube |
| Technology | Trench|Field Stop |
| Вес, г | 7.2 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Type | N |
| Subcategory: | IGBTs |
| Configuration | Single |
| Manufacturer: | onsemi |
| Package Width | 4.7 mm |
| Product Type: | IGBT Transistors |
| Configuration: | Single |
| Package Length | 15.62 mm |
| Mounting Style: | Through Hole |
| Part # Aliases: | FGH40T65SHD_F155 |
| Supplier Package | TO-247 |
| Product Category: | IGBT Transistors |
| Standard Package Name | TO |
| Factory Pack Quantity: | 30 |
| SVHC Exceeds Threshold | Yes |
| Pd - Power Dissipation: | 268 W |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +175 C |
| Maximum Power Dissipation (mW) | 268 |
| Minimum Operating Temperature: | -55 C |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.6 V |
| Continuous Collector Current at 25 C: | 80 A |
| Maximum Collector-Emitter Voltage (V) | 650 |
| Maximum Gate Emitter Leakage Current (uA) | 0.4 |
| Maximum Continuous DC Collector Current (A) | 80 |
| Typical Collector-Emitter Saturation Voltage (V) | 1.6 |