FF7MR12W1M1HB17BPSA1, MOSFET Transistor, N Channel, 105 A, 1.2 kV, 0.0058 ohm, 18 V, 5.15 V
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- Код товара
- 8046469877
- Артикул
- FF7MR12W1M1HB17BPSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Fall Time:
- 34 ns
- Packaging:
- Tray
- Rise Time:
- 110 ns
Цена по запросу
(от 28 240 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Infineon Technologies |
| Fall Time: | 34 ns |
| Packaging: | Tray |
| Rise Time: | 110 ns |
| Вес, г | 240 |
| Technology: | SiC |
| Subcategory: | Discrete and Power Modules |
| Manufacturer: | Infineon |
| Package/Case: | 48 mm x 33.8 mm x 12 mm |
| Product Type: | MOSFET Modules |
| Configuration: | Dual |
| Mounting Style: | Press Fit |
| Part # Aliases: | FF7MR12W1M1H_B17 SP005858910 |
| Product Category: | MOSFET Modules |
| Transistor Polarity: | N-Channel |
| Vf - Forward Voltage: | 5.28 V |
| Factory Pack Quantity: | 24 |
| Pd - Power Dissipation: | 20 mW |
| Vgs - Gate-Source Voltage: | -7 V, +20 V |
| Typical Turn-On Delay Time: | 78 ns |
| Typical Turn-Off Delay Time: | 119 ns |
| Id - Continuous Drain Current: | 105 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Rds On - Drain-Source Resistance: | 5.8 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 1.2 kV |
| Vgs th - Gate-Source Threshold Voltage: | 5.15 V |