FF11MR12W2M1H_B70 Type N-Channel MOSFET, 75 A, 1200 V Enhancement EasyPACK FF11MR12W2M1HB70BPSA1
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8050801765
- Артикул
- FF11MR12W2M1HB70BPSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Type:
- 2 N-Channel
- Brand:
- Infineon Technologies
- Fall Time:
- 28 ns
- Packaging:
- Tray
Цена по запросу
(от 70 520 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Type: | 2 N-Channel |
| Brand: | Infineon Technologies |
| Fall Time: | 28 ns |
| Packaging: | Tray |
| Rise Time: | 16.4 ns |
| Вес, г | 1 |
| Technology: | SiC |
| Subcategory: | Discrete and Power Modules |
| Manufacturer: | Infineon |
| Package/Case: | 92 mm x 20 mm x 30 mm |
| Product Type: | MOSFET Modules |
| Configuration: | Dual |
| Mounting Style: | Screw Mount |
| Part # Aliases: | FF11MR12W2M1H_B70 SP005751849 |
| Product Category: | MOSFET Modules |
| Структура | N-Channel |
| Transistor Polarity: | N-Channel |
| If - Forward Current: | 89 A |
| Vf - Forward Voltage: | 1.5 V |
| Vr - Reverse Voltage: | 1.2 kV |
| Factory Pack Quantity: | 15 |
| Особенности | - |
| Pd - Power Dissipation: | 20 mW |
| Vgs - Gate-Source Voltage: | -10 V, +20 V |
| Typical Turn-On Delay Time: | 25.1 ns |
| Typical Turn-Off Delay Time: | 64.3 ns |
| Id - Continuous Drain Current: | 100 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -40 C |
| Rds On - Drain-Source Resistance: | 11.3 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 1.2 kV |
| Vgs th - Gate-Source Threshold Voltage: | 4.5 V |
| Максимальная рассеиваемая мощность Pси макс..Вт | 12 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |