FDWS9509L-F085, Транзистор: P-MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8058802734
- Артикул
- FDWS9509L-F085
- Бренд
- ON Semiconductor***
- PPAP
- Yes
- SVHC
- Yes
- Mounting
- Surface Mount
- Packaging
- Tape and Reel
Цена по запросу
(от 774 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET P-CH 40V 65A 8-контактный DFNW EP T/R Автомобильный AEC-Q101
Технические параметры
| PPAP | Yes |
| SVHC | Yes |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | Yes |
| Вес, г | 1 |
| PCB changed | 8 |
| Part Status | NRND |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 5.8 mm |
| Package Length | 4.9 mm |
| Product Category | Power MOSFET |
| Supplier Package | DFNW EP |
| Standard Package Name | DFN |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 71 |
| Typical Rise Time (ns) | 5 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 107000 |
| Typical Gate Charge @ 10V (nC) | 48 |
| Typical Gate Charge @ Vgs (nC) | 48@10V |
| Maximum Gate Source Voltage (V) | ±16 |
| Typical Output Capacitance (pF) | 1230 |
| Typical Turn-On Delay Time (ns) | 10 |
| Maximum Drain Source Voltage (V) | 40 |
| Typical Turn-Off Delay Time (ns) | 198 |
| Maximum Diode Forward Voltage (V) | 1.25 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 65 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 3360@20V |
| Maximum Drain Source Resistance (MOhm) | 8@10V |
| Maximum Positive Gate Source Voltage (V) | 16 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 50 |