FDV305N, Транзистор N-MOSFET, полевой, 20В, 900мА, 350мВт, SOT23
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017540976
- Артикул
- FDV305N
- Бренд
- ON Semiconductor***
- PPAP
- No
- RoHS
- Details
- Type
- MOSFET
- Brand
- ON Semiconductor/Fairchild
Цена по запросу
(от 10,20 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
ON Semi предлагает обширный ассортимент устройств на МОП-транзистораx, который включает в себя высоковольтные (>250 В) и низковольтные (<250 В) типы.
Технические параметры
| PPAP | No |
| RoHS | Details |
| Type | MOSFET |
| Brand | ON Semiconductor/Fairchild |
| Type: | MOSFET |
| Width | 1.3 mm |
| Brand: | onsemi/Fairchild |
| Height | 1.2 mm |
| Length | 2.9 mm |
| Series | FDV305N |
| EU RoHS | Compliant |
| Product | MOSFET Small Signal |
| Series: | FDV305N |
| Mounting | Surface Mount |
| Product: | MOSFET Small Signals |
| ECCN (US) | EAR99 |
| Fall Time | 7 ns |
| Packaging | Reel |
| Pin Count | 3 |
| Rise Time | 7 ns |
| Tradename | PowerTrench |
| Automotive | No |
| Fall Time: | 7 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 7 ns |
| Technology | Si |
| Tradename: | PowerTrench |
| Вес, г | 0.02 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Unit Weight | 0.001058 oz |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | ON Semiconductor |
| Package Type | SOT-23 |
| Subcategory: | MOSFETs |
| Корпус | sot23 |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| Part # Aliases | FDV305N_NL |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Part # Aliases: | FDV305N_NL |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Supplier Package | SOT-23 |
| Transistor Type: | 1 N-Channel |
| Maximum IDSS (uA) | 1 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 1.5 nC |
| Number of Channels | 1 Channel |
| Process Technology | PowerTrench |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | N-Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 3000 |
| Standard Package Name | SOT |
| Pd - Power Dissipation | 350 mW |
| Typical Fall Time (ns) | 1.4 |
| Typical Rise Time (ns) | 7 |
| Особенности | - |
| Pd - Power Dissipation: | 350 mW |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 350 mW |
| Typical Gate Charge @ Vgs | 1.1 nC @ 4.5 V |
| Vgs - Gate-Source Voltage | 12 V |
| Typical Turn-On Delay Time | 4.5 ns |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 8 ns |
| Typical Turn-On Delay Time: | 4.5 ns |
| Maximum Drain Source Voltage | 20 V |
| Typical Turn-Off Delay Time: | 8 ns |
| Id - Continuous Drain Current | 900 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 3 S |
| Id - Continuous Drain Current: | 900 mA |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 350 |
| Minimum Gate Threshold Voltage | 0.6V |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 1.1 |
| Typical Gate Charge @ Vgs (nC) | 1.1@4.5V |
| Forward Transconductance - Min: | 3 S |
| Maximum Drain Source Resistance | 220 mΩ |
| Maximum Gate Source Voltage (V) | ±12 |
| Typical Output Capacitance (pF) | 30 |
| Typical Turn-On Delay Time (ns) | 4.5 |
| Maximum Continuous Drain Current | 900 mA |
| Maximum Drain Source Voltage (V) | 20 |
| Rds On - Drain-Source Resistance | 164 mOhms |
| Typical Gate Plateau Voltage (V) | 1.9 |
| Typical Turn-Off Delay Time (ns) | 8 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Rds On - Drain-Source Resistance: | 164 mOhms |
| Typical Diode Forward Voltage (V) | 0.75 |
| Typical Gate to Drain Charge (nC) | 0.26 |
| Maximum Gate Threshold Voltage (V) | 1.5 |
| Minimum Gate Threshold Voltage (V) | 0.6 |
| Typical Gate Threshold Voltage (V) | 1 |
| Typical Gate to Source Charge (nC) | 0.26 |
| Typical Reverse Recovery Time (ns) | 7.4 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.9 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 109@10V |
| Typical Reverse Recovery Charge (nC) | 2.2 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Maximum Drain Source Resistance (mOhm) | 220@4.5V |
| Vgs th - Gate-Source Threshold Voltage: | 600 mV |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 12 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 2 |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 14@10V |
| Крутизна характеристики, S | 3 |
| Пороговое напряжение на затворе | 1…2.5 В |
| Максимальное напряжение сток-исток Uси,В | 20 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 0.9 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.35 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±12В |