FDV304P, Транзистор P-МОП, полевой, logic level, -25В, -460мА, 350мВт
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017540975
- Артикул
- FDV304P
- Бренд
- ON Semiconductor***
- Type:
- MOSFET
- Width
- 1.3mm
- Brand:
- onsemi/Fairchild
- RDS-on
- 1100@4.5V mOhm
Цена по запросу
(от 12,10 ₽)
Минимальный заказ: 10 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Линейка P-канальныx МОП-транзисторов ON Semiconductors производится с использованием запатентованной компанией ON Semi теxнологии DMOS с высокой плотностью ячеек.
Технические параметры
| Type: | MOSFET |
| Width | 1.3mm |
| Brand: | onsemi/Fairchild |
| RDS-on | 1100@4.5V mOhm |
| Series: | FDV304P |
| Mounting | Surface Mount |
| Product: | MOSFET Small Signals |
| Pin Count | 3 |
| Fall Time: | 8 ns |
| Rise Time: | 8 ns |
| Вес, г | 0.02 |
| Lead Finish | Matte Tin |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | SOT-23 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Part # Aliases: | FDV304P_NL |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 1.5 nC |
| Typical Fall Time | 35 ns |
| Typical Rise Time | 8 ns |
| Max Processing Temp | 260 |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | P-Channel |
| Operating Temperature | -55 to 150 °C |
| Pd - Power Dissipation: | 350 mW |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 350 mW |
| Typical Gate Charge @ Vgs | 1.1 nC @ 4.5 V |
| Typical Turn-On Delay Time | 6 ns |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Maximum Gate Source Voltage | 8 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 55 ns |
| Typical Turn-On Delay Time: | 6 ns |
| Maximum Drain Source Voltage | 25 V |
| Typical Turn-Off Delay Time: | 55 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 460 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 0.65V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 0.8 S |
| Maximum Drain Source Resistance | 1.1 Ω |
| кол-во в упаковке | 3000 |
| Maximum Continuous Drain Current | 0.46 A |
| Rds On - Drain-Source Resistance: | 1.1 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 25 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |