FDS9958, MOSFETs -60V Dual P-Channel PowerTrench
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004833987
- Артикул
- FDS9958
- Бренд
- ON Semiconductor***
- Case
- SO8
- Brand:
- onsemi/Fairchild
- Mounting
- SMD
- Fall Time:
- 6 ns
Цена по запросу
(от 139 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
МОП-транзисторы Fairchild PowerTrench
Технические параметры
| Case | SO8 |
| Brand: | onsemi/Fairchild |
| Mounting | SMD |
| Fall Time: | 6 ns |
| Rise Time: | 3 ns |
| Technology | PowerTrench® |
| Вес, г | 0.2 |
| Gate charge | 23nC |
| Technology: | Si |
| Manufacturer | ONSEMI |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Drain current | -2.9A |
| Manufacturer: | onsemi |
| Package/Case: | SOIC-8 |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 2 P-Channel |
| Power dissipation | 2W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 23 nC |
| Type of transistor | P-MOSFET x2 |
| Структура | P-Channel |
| Gate-source voltage | ±20V |
| Number of Channels: | 2 Channel |
| On-state resistance | 0.19Ω |
| Drain-source voltage | -60V |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity: | 2500 |
| Особенности | TrenchFET |
| Pd - Power Dissipation: | 2 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 6 ns |
| Typical Turn-Off Delay Time: | 27 ns |
| Id - Continuous Drain Current: | 2.9 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 105 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |