FDS9945 SO-8
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8075229424
- Артикул
- FDS9945
- Бренд
- Fairchild Semiconductor
- RoHS
- Details
- Type
- MOSFET
- Brand
- ON Semiconductor/Fairchild
- Type:
- MOSFET
Цена по запросу
(от 120 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
ON Semi предлагает обширный ассортимент устройств на МОП-транзистораx, который включает в себя высоковольтные (>250 В) и низковольтные (<250 В) типы.
Технические параметры
| RoHS | Details |
| Type | MOSFET |
| Brand | ON Semiconductor/Fairchild |
| Type: | MOSFET |
| Width | 3.9 mm |
| Brand: | onsemi/Fairchild |
| Height | 1.75 mm |
| Length | 4.9 mm |
| Series | FDS9945 |
| Series: | FDS9945 |
| Fall Time | 3 ns |
| Packaging | Reel |
| Pin Count | 8 |
| Rise Time | 4.3 ns |
| Tradename | PowerTrench |
| Fall Time: | 3 ns |
| Rise Time: | 4.3 ns |
| Technology | Si |
| Tradename: | PowerTrench |
| Вес, г | 1 |
| Technology: | Si |
| Unit Weight | 0.007478 oz |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | ON Semiconductor |
| Package Type | SOIC |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Dual Dual Drain |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Mounting Style | SMD/SMT |
| Package / Case | SO-8 |
| Part # Aliases | FDS9945_NL |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOIC-8 |
| Part # Aliases: | FDS9945_NL |
| Transistor Type | 2 N-Channel |
| Product Category | MOSFET |
| Transistor Type: | 2 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 13 nC |
| Number of Channels | 2 Channel |
| Number of Channels: | 2 Channel |
| Transistor Material | Si |
| Transistor Polarity | N-Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 2500 |
| Pd - Power Dissipation | 2 W |
| Pd - Power Dissipation: | 2 W |
| Transistor Configuration | Isolated |
| Maximum Power Dissipation | 2 W |
| Typical Gate Charge @ Vgs | 8 nC @ 5 V |
| Vgs - Gate-Source Voltage | 20 V |
| Typical Turn-On Delay Time | 7 ns |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Typical Turn-Off Delay Time | 19 ns |
| Typical Turn-On Delay Time: | 7 ns |
| Maximum Drain Source Voltage | 60 V |
| Typical Turn-Off Delay Time: | 19 ns |
| Id - Continuous Drain Current | 3.5 A |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 8.6 S |
| Id - Continuous Drain Current: | 3.5 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 8.6 S |
| Maximum Drain Source Resistance | 100 mΩ |
| Maximum Continuous Drain Current | 3.5 A |
| Rds On - Drain-Source Resistance | 100 mOhms |
| Rds On - Drain-Source Resistance: | 100 mOhms |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |