FDS9435A, Транзистор: P-MOSFET, полевой, -30В, -5,3А, 2,5Вт, SO8
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8061804392
- Артикул
- FDS9435A
- Бренд
- ON Semiconductor***
- Type:
- MOSFET
- Width
- 4mm
- Brand:
- onsemi/Fairchild
- Series
- PowerTrench
Цена по запросу
(от 74 ₽)
Минимальный заказ: 2500 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
МОП-транзисторы PowerTrench® - это оптимизированные силовые переключатели, которые повышают эффективность системы и удельную мощность.
Технические параметры
| Type: | MOSFET |
| Width | 4mm |
| Brand: | onsemi/Fairchild |
| Series | PowerTrench |
| Series: | FDS9435A |
| FET Type | P-Channel |
| Packaging | Digi-ReelВ® |
| Pin Count | 8 |
| Vgs (Max) | В±25V |
| Fall Time: | 9 ns |
| Rise Time: | 13 ns |
| Technology | MOSFET(Metal Oxide) |
| Tradename: | PowerTrench |
| Вес, г | 0.1 |
| FET Feature | - |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Manufacturer | ON Semiconductor |
| Package Type | SOIC |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | 8-SOIC(0.154", 3.90mm Width) |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOIC-8 |
| Part # Aliases: | FDS9435A_NL |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 10 nC |
| Vgs(th) (Max) @ Id | 3V @ 250ВµA |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | P-Channel |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 5.3A, 10V |
| Pd - Power Dissipation: | 2.5 W |
| Power Dissipation (Max) | 2.5W(Ta) |
| Supplier Device Package | 8-SOIC |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 2.5 W |
| Typical Gate Charge @ Vgs | 10 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 7 ns |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
| Maximum Drain Source Voltage | 30 V |
| Typical Turn-Off Delay Time: | 14 ns |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Drain to Source Voltage (Vdss) | 30V |
| Id - Continuous Drain Current: | 5.3 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 10 S |
| Maximum Drain Source Resistance | 50 mΩ |
| Maximum Continuous Drain Current | 5.3 A |
| Rds On - Drain-Source Resistance: | 50 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 528pF @ 15V |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Current - Continuous Drain (Id) @ 25В°C | 5.3A(Ta) |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |