FDS8984, Транзистор N-MOSFET x2, полевой, 30В, 7А, 1,6Вт, SO8, PowerTrench®
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017540967
- Артикул
- FDS8984
- Бренд
- ON Semiconductor***
- MSL
- MSL 1-Unlimited
- Type:
- MOSFET
- Brand:
- onsemi/Fairchild
- Series:
- FDS8984
Цена по запросу
(от 66,47 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
МОП-транзисторы Fairchild PowerTrench
Технические параметры
| MSL | MSL 1-Unlimited |
| Type: | MOSFET |
| Brand: | onsemi/Fairchild |
| Series: | FDS8984 |
| Product: | MOSFET Small Signal |
| Pin Count | 8 |
| Fall Time: | 9 ns |
| Rise Time: | 9 ns |
| Tradename: | PowerTrench |
| Вес, г | 0.26 |
| No. of Pins | 8Pins |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOIC |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOIC-8 |
| Transistor Type: | 2 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 13 nC |
| Структура | N-Channel |
| Number of Channels: | 2 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Transistor Case Style | SOIC |
| Особенности | TrenchFET |
| Pd - Power Dissipation: | 1.6 W |
| Transistor Configuration | Isolated |
| Maximum Power Dissipation | 1.6 W |
| Operating Temperature Max | 150°C |
| Typical Gate Charge @ Vgs | 9.2 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Power Dissipation N Channel | 1.6W |
| Power Dissipation P Channel | 1.6W |
| Typical Turn-On Delay Time: | 5 ns |
| Maximum Drain Source Voltage | 30 V |
| Typical Turn-Off Delay Time: | 42 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 7 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 1.2V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 23 mΩ |
| Maximum Continuous Drain Current | 7 A |
| Rds On - Drain-Source Resistance: | 19 mOhms |
| Drain Source Voltage Vds N Channel | 30V |
| Drain Source Voltage Vds P Channel | 30V |
| Continuous Drain Current Id N Channel | 7A |
| Continuous Drain Current Id P Channel | 7A |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Drain Source On State Resistance N Channel | 0.019ohm |
| Drain Source On State Resistance P Channel | 0.019ohm |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Пороговое напряжение на затворе | 3V@250uA |
| Максимальное напряжение сток-исток Uси,В | 30 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 7 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 1.6 |
| Максимальное напряжение затвор-исток Uзи макс.,В | -20 V, +20 V |