FDS6930B, Транзистор
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8007847528
- Артикул
- FDS6930B
- Бренд
- ON Semiconductor***
- Type:
- MOSFET
- Width
- 4mm
- Brand:
- onsemi/Fairchild
- Series
- PowerTrench
Цена по запросу
(от 720 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
МОП-транзисторы Fairchild PowerTrench
Технические параметры
| Type: | MOSFET |
| Width | 4mm |
| Brand: | onsemi/Fairchild |
| Series | PowerTrench |
| Series: | FDS6930B |
| Pin Count | 8 |
| Fall Time: | 2 ns |
| Rise Time: | 6 ns |
| Tradename: | PowerTrench |
| Вес, г | 0.19 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOIC |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOIC-8 |
| Part # Aliases: | FDS6930B_NL |
| Transistor Type: | 2 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 3.8 nC |
| Number of Channels: | 2 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Особенности | - |
| Pd - Power Dissipation: | 2 W |
| Transistor Configuration | Isolated |
| Maximum Power Dissipation | 2 W |
| Typical Gate Charge @ Vgs | 2.7 nC @ 5 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Typical Turn-On Delay Time: | 6 ns |
| Maximum Drain Source Voltage | 30 V |
| Typical Turn-Off Delay Time: | 16 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 5.5 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 19 S |
| Maximum Drain Source Resistance | 38 mΩ |
| Maximum Continuous Drain Current | 5.5 A |
| Rds On - Drain-Source Resistance: | 38 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 2 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |