FDS6911, Trans MOSFET N-CH 20V 7.5A 8-Pin SOIC T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8002305647
- Артикул
- FDS6911
- Бренд
- ON Semiconductor***
- PPAP
- No
- Mounting
- Surface Mount
- Packaging
- Tape and Reel
- Pin Count
- 8
Цена по запросу
(от 286 ₽)
Минимальный заказ: 266 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 20V 7.5A с 8-контактным разъемом SOIC T/R
Технические параметры
| PPAP | No |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 8 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual Dual Drain |
| Package Width | 3.9 mm |
| Package Length | 4.9 mm |
| Product Category | Power MOSFET |
| Supplier Package | SOIC |
| Maximum IDSS (uA) | 1 |
| Process Technology | PowerTrench |
| Структура | N-Channel |
| Standard Package Name | SO |
| Typical Fall Time (ns) | 7 |
| Typical Rise Time (ns) | 5 |
| Особенности | - |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1600 |
| Typical Gate Charge @ 10V (nC) | 17 |
| Typical Gate Charge @ Vgs (nC) | 17@10V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 300 |
| Typical Turn-On Delay Time (ns) | 9 |
| Maximum Drain-Source Voltage (V) | 20 |
| Typical Gate Plateau Voltage (V) | 2.8 |
| Typical Turn-Off Delay Time (ns) | 26 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Gate to Drain Charge (nC) | 2.7 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Typical Gate Threshold Voltage (V) | 1.8 |
| Typical Gate to Source Charge (nC) | 3.1 |
| Typical Reverse Recovery Time (ns) | 24 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 7.5 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 1130@15V |
| Typical Reverse Recovery Charge (nC) | 13 |
| Maximum Drain-Source Resistance (mOhm) | 13@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 20 |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 10.6@10V|13@4.5V |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 1.6 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 100@15V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 7.5 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 135 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 20 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 7.5 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |