FDS6890A, MOSFETs SO-8 DUAL N-CH 20V
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004833950
- Артикул
- FDS6890A
- Бренд
- ON Semiconductor***
- PPAP
- No
- Type:
- MOSFET
- Brand:
- onsemi/Fairchild
- EU RoHS
- Compliant
Цена по запросу
(от 155,19 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 20V 7.5A с 8-контактным разъемом SOIC T/R
Технические параметры
| PPAP | No |
| Type: | MOSFET |
| Brand: | onsemi/Fairchild |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Fall Time: | 23 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 26 ns |
| Вес, г | 0.19 |
| PCB changed | 8 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Subcategory: | MOSFETs |
| Корпус | SO-8 |
| Channel Mode: | Enhancement |
| Configuration | Dual Dual Drain |
| Manufacturer: | onsemi |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOIC-8 |
| Part # Aliases: | FDS6890A_NL |
| Product Category | Power MOSFET |
| Supplier Package | SOIC |
| Transistor Type: | 2 N-Channel |
| Maximum IDSS (uA) | 1 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 32 nC |
| Process Technology | PowerTrench |
| Структура | N-Channel |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | N-Channel |
| Standard Package Name | SO |
| Factory Pack Quantity: | 2500 |
| Power Dissipation (Pd) | 900mW |
| Typical Fall Time (ns) | 23 |
| Typical Rise Time (ns) | 26 |
| Особенности | полевая сборка |
| Pd - Power Dissipation: | 2 W |
| Total Gate Charge (Qg@Vgs) | 32nC@4.5V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Number of Elements per Chip | 2 |
| Typical Turn-On Delay Time: | 13 ns |
| Input Capacitance (Ciss@Vds) | 2.13nF@10V |
| Typical Turn-Off Delay Time: | 65 ns |
| Continuous Drain Current (Id) | 7.5A |
| Id - Continuous Drain Current: | 7.5 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 2000 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ Vgs (nC) | 23@4.5V |
| Forward Transconductance - Min: | 35 S |
| Maximum Gate Source Voltage (V) | ±8 |
| Typical Output Capacitance (pF) | 545 |
| Typical Turn-On Delay Time (ns) | 13 |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Gate Plateau Voltage (V) | 1.6 |
| Typical Turn-Off Delay Time (ns) | 65 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Rds On - Drain-Source Resistance: | 13 mOhms |
| Typical Diode Forward Voltage (V) | 0.65 |
| Typical Gate to Drain Charge (nC) | 4.4 |
| Maximum Gate Threshold Voltage (V) | 1.5 |
| Minimum Gate Threshold Voltage (V) | 0.5 |
| Typical Gate Threshold Voltage (V) | 0.8 |
| Typical Gate to Source Charge (nC) | 3.2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 7.5 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 2130@10V |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Maximum Drain Source Resistance (mOhm) | 18@4.5V |
| Vgs th - Gate-Source Threshold Voltage: | 500 mV |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 8 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 20 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 1.6 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 270@10V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 7.5 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 135 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 20 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 7.5 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 2 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |