FDS6692A, Trans MOSFET N-CH 30V 9A 8-Pin SOIC T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8009014374
- Артикул
- FDS6692A
- Бренд
- ON Semiconductor***
- PPAP
- No
- Brand
- onsemi
- Series
- PowerTrench
- Mounting
- Surface Mount
Цена по запросу
(от 155 ₽)
Минимальный заказ: 497 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзисторный MOSFET N-CH 30V 9A 8-контактный SOIC T/R
Технические параметры
| PPAP | No |
| Brand | onsemi |
| Series | PowerTrench |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 8 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOIC |
| Configuration | Single Quad Drain Triple Source |
| Mounting Type | Surface Mount |
| Package Width | 3.9 mm |
| Package Length | 4.9 mm |
| Product Category | Power MOSFET |
| Supplier Package | SOIC |
| Process Technology | TMOS |
| Структура | N-Channel |
| Transistor Material | Si |
| Standard Package Name | SO |
| Typical Fall Time (ns) | 13 |
| Typical Rise Time (ns) | 32 |
| Особенности | - |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 1.47 W |
| Typical Gate Charge @ Vgs | 22 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Power Dissipation (mW) | 1470 |
| Minimum Gate Threshold Voltage | 1.2V |
| Typical Gate Charge @ 10V (nC) | 22 |
| Typical Gate Charge @ Vgs (nC) | 22@10V |
| Maximum Drain Source Resistance | 19 mΩ |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 8 |
| Maximum Continuous Drain Current | 9 A |
| Maximum Drain-Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 33 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 9 |
| Typical Input Capacitance @ Vds (pF) | 1210@15V |
| Maximum Drain-Source Resistance (mOhm) | 11.5@10V |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 30 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 9 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |