FDS6679AZ, Power MOSFET, P Channel, 30 V, 13 A, 0.0077 ohm, SOIC, Surface Mount
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8146871924
- Артикул
- FDS6679AZ
- Бренд
- ON Semiconductor***
- RoHS
- Details
- Brand
- ON Semiconductor/Fairchild
- Width
- 3.9 mm
- Brand:
- onsemi/Fairchild
Цена по запросу
(от 181 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: P-MOSFET, полевой, -30В, -13А, 2,5Вт, SO8
Технические параметры
| RoHS | Details |
| Brand | ON Semiconductor/Fairchild |
| Width | 3.9 mm |
| Brand: | onsemi/Fairchild |
| Height | 1.75 mm |
| Length | 4.9 mm |
| Series | FDS6679AZ |
| Series: | FDS6679AZ |
| Fall Time | 92 ns |
| Packaging | Cut Tape |
| Pin Count | 8 |
| Rise Time | 15 ns |
| Tradename | PowerTrench |
| Fall Time: | 92 ns |
| Rise Time: | 15 ns |
| Technology | Si |
| Tradename: | PowerTrench |
| Вес, г | 0.15 |
| Technology: | Si |
| Unit Weight | 0.004586 oz |
| Channel Mode | Enhancement |
| Channel Type | P |
| Manufacturer | ON Semiconductor |
| Package Type | SOIC |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single Quad Drain Triple Source |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | SO-8 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOIC-8 |
| Transistor Type | 1 P-Channel |
| Product Category | MOSFET |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 96 nC |
| Number of Channels | 1 Channel |
| Структура | P-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | P-Channel |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity | 2500 |
| Pd - Power Dissipation | 2.5 W |
| Особенности | сквозной канал |
| Pd - Power Dissipation: | 2.5 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 2.5 W |
| Typical Gate Charge @ Vgs | 68 nC @ 10 V |
| Vgs - Gate-Source Voltage | 25 V |
| Typical Turn-On Delay Time | 13 ns |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 210 ns |
| Typical Turn-On Delay Time: | 13 ns |
| Maximum Drain Source Voltage | 30 V |
| Typical Turn-Off Delay Time: | 210 ns |
| Id - Continuous Drain Current | -13 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Id - Continuous Drain Current: | 13 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 9 mΩ |
| кол-во в упаковке | 2500 |
| Maximum Continuous Drain Current | 13 A |
| Rds On - Drain-Source Resistance | 9.3 mOhms |
| Rds On - Drain-Source Resistance: | 9.3 mOhms |
| Vds - Drain-Source Breakdown Voltage | -30 V |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Максимальное напряжение сток-исток Uси,В | 30 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 13 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 0.0077 Ом |