FDS6670AS, Trans MOSFET N-CH 30V 13.5A 8-Pin SOIC T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8002306603
- Артикул
- FDS6670AS
- Бренд
- ON Semiconductor***
- PPAP
- No
- RoHS
- Details
- Type
- FET
- Brand
- ON Semiconductor/Fairchild
Цена по запросу
(от 100 ₽)
Минимальный заказ: 758 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 30V 13,5A с 8-контактным разъемом SOIC T/R
Технические параметры
| PPAP | No |
| RoHS | Details |
| Type | FET |
| Brand | ON Semiconductor/Fairchild |
| Width | 3.9 mm |
| Height | 1.75 mm |
| Length | 4.9 mm |
| Series | FDS6670AS |
| Mounting | Surface Mount |
| Fall Time | 18 ns |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Rise Time | 5 ns |
| Tradename | PowerTrench SyncFET |
| Automotive | No |
| Lead Shape | Gull-wing |
| Technology | Si |
| Вес, г | 0.4 |
| PCB changed | 8 |
| Part Status | Obsolete |
| Unit Weight | 0.004586 oz |
| Channel Mode | Enhancement |
| Manufacturer | ON Semiconductor |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 3.9 |
| Mounting Style | SMD/SMT |
| Package / Case | SO-8 |
| Package Length | 4.9 |
| Part # Aliases | FDS6670AS_NL |
| Transistor Type | 1 N-Channel |
| Product Category | Power MOSFET |
| Supplier Package | SOIC |
| Maximum IDSS (uA) | 500 |
| Number of Channels | 1 Channel |
| Структура | N-Channel |
| Transistor Polarity | N-Channel |
| Factory Pack Quantity | 2500 |
| Standard Package Name | SO |
| Pd - Power Dissipation | 2.5 W |
| Typical Fall Time (ns) | 13|18 |
| Typical Rise Time (ns) | 15|5 |
| Особенности | - |
| Vgs - Gate-Source Voltage | 20 V |
| Typical Turn-On Delay Time | 10 ns |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 27 ns |
| Id - Continuous Drain Current | 13.5 A |
| Maximum Gate Resistance (Ohm) | 4.2 |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 66 S |
| Maximum Power Dissipation (mW) | 2500 |
| Typical Gate Charge @ 10V (nC) | 27 |
| Typical Gate Charge @ Vgs (nC) | 27@10V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 440 |
| Typical Turn-On Delay Time (ns) | 13|10 |
| Maximum Drain-Source Voltage (V) | 30 |
| Rds On - Drain-Source Resistance | 9 mOhms |
| Typical Gate Plateau Voltage (V) | 2.8 |
| Typical Turn-Off Delay Time (ns) | 27|24 |
| Maximum Diode Forward Voltage (V) | 0.7 |
| Typical Diode Forward Voltage (V) | 0.6 |
| Typical Gate to Drain Charge (nC) | 5.1 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Typical Gate Threshold Voltage (V) | 1.7 |
| Typical Gate to Source Charge (nC) | 4.2 |
| Typical Reverse Recovery Time (ns) | 20 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 1540@15V |
| Typical Reverse Recovery Charge (nC) | 15 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Maximum Drain-Source Resistance (mOhm) | 9@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 50 |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 7.5@10V|9@4.5V |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2.5 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 160@15V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 13.5 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 125 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 30 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 13.5 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 2.5 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |