FDS5672, MOSFETs 60V 12A 10 OHM NCH POWER TRENCH MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005442804
- Артикул
- FDS5672
- Бренд
- ON Semiconductor***
- PPAP
- No
- Type
- 1PCSNChannel
- Width
- 4mm
- Series
- PowerTrench
Цена по запросу
(от 224,85 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
ON Semi предлагает обширный ассортимент устройств на МОП-транзистораx, который включает в себя высоковольтные (>250 В) и низковольтные (<250 В) типы.
Технические параметры
| PPAP | No |
| Type | 1PCSNChannel |
| Width | 4mm |
| Series | PowerTrench |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 5 |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOIC |
| Configuration | Single Quad Drain Triple Source |
| Mounting Type | Surface Mount |
| Product Category | Power MOSFET |
| Supplier Package | SOIC |
| Maximum IDSS (uA) | 1 |
| Process Technology | PowerTrench |
| Структура | N-Channel |
| Transistor Material | Si |
| Standard Package Name | SO |
| Power Dissipation (Pd) | 2.5W |
| Typical Fall Time (ns) | 14 |
| Typical Rise Time (ns) | 20 |
| Особенности | - |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 2.5 W |
| Typical Gate Charge @ Vgs | 34 nC @ 10 V |
| Total Gate Charge (Qg@Vgs) | 45nC@10V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Input Capacitance (Ciss@Vds) | 2.2nF@25V |
| Maximum Drain Source Voltage | 60 V |
| Continuous Drain Current (Id) | 12A |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Power Dissipation (mW) | 2500 |
| Minimum Gate Threshold Voltage | 2V |
| Typical Gate Charge @ 10V (nC) | 34 |
| Typical Gate Charge @ Vgs (nC) | 34@10V |
| Maximum Drain Source Resistance | 10 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 410 |
| Typical Turn-On Delay Time (ns) | 13 |
| Maximum Continuous Drain Current | 12 A |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Gate Plateau Voltage (V) | 4.7 |
| Typical Turn-Off Delay Time (ns) | 35 |
| Maximum Diode Forward Voltage (V) | 1.25 |
| Typical Gate to Drain Charge (nC) | 9.3 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Gate to Source Charge (nC) | 9.4 |
| Typical Reverse Recovery Time (ns) | 39(Max) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 12 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 2200@25V |
| Typical Reverse Recovery Charge (nC) | 40(Max) |
| Maximum Drain Source Resistance (mOhm) | 10@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 130@25V |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 85 |
| Пороговое напряжение на затворе | 2.2V@250uA |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 12 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 2.5 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 10 Ом |